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Journal of Applied Physics

Volumn 110, Issue 7, 2011, Pages

The electronic structure of co-sputtered zinc indium tin oxide thin films

(5) Carreras, Paz a Gutmann, Sebastian b Antony, Aldrin a Bertomeu, Joan a Schlaf, Rudy c

a UNIVERSITY OF BARCELONA (Spain)

b UNIVERSITY OF SOUTH FLORIDA (United States)

c University of South Florida (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT RATE; INDIUM TIN OXIDE; INDIUM TIN OXIDE THIN FILMS; RADIO-FREQUENCY (RF) MAGNETRON; ROOM TEMPERATURE; SURFACE LAYERS; TIO; TRANSPARENT CONDUCTIVE OXIDES; ULTRA-VIOLET LIGHT; ULTRAVIOLET PHOTOEMISSION SPECTROSCOPY; ZINC CONTENT; ZN CONTENT;

CONDUCTIVE FILMS; DENSITY FUNCTIONAL THEORY; ELECTRON MOBILITY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; EMISSION SPECTROSCOPY; EXPERIMENTS; INDIUM; INDIUM COMPOUNDS; MAGNETRONS; SURFACE STRUCTURE; TIN; TIN OXIDES; TITANIUM DIOXIDE; ULTRAVIOLET RADIATION; WORK FUNCTION; ZINC;

OXIDE FILMS;

EID: 80055007027 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3647780 Document Type: Article

Times cited : (9)

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