Effects of dopants in InOx-based amorphous oxide semiconductors for thin-film transistor applications

Applied Physics Letters

Volumn 103, Issue 17, 2013, Pages

  Aikawa, Shinya ^a   Nabatame, Toshihide ^a   Tsukagoshi, Kazuhito ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS METALS; AMORPHOUS OXIDE SEMICONDUCTOR (AOS); METAL-OXIDE; PARTIAL PRESSURE OF OXYGEN; THERMAL-ANNEALING; THIN-FILM TRANSISTOR (TFTS); TIO;

BOND STRENGTH (CHEMICAL); ELECTRIC PROPERTIES; FLAT PANEL DISPLAYS; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM TRANSISTORS;

DOPING (ADDITIVES);

EID: 84887050684     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4822175     Document Type: Article

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