High-mobility thin-film transistors with polycrystalline In-Ga-O channel fabricated by DC magnetron sputtering

Applied Physics Express

Volumn 5, Issue 1, 2012, Pages

  Ebata, Kazuaki ^a   Tomai, Shigekazu ^a   Tsuruma, Yuki ^a   Iitsuka, Takashi ^a   Matsuzaki, Shigeo ^a   Yano, Koki ^a  

^a IDEMITSU KOSAN CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; AVERAGE GRAIN SIZE; BIXBYITE STRUCTURE; CRYSTALLINE PHASE; DC MAGNETRON SPUTTERING; DIRECT CURRENT MAGNETRON SPUTTERING; FIELD-EFFECT MOBILITIES; GATE VOLTAGE SWING; HIGH MOBILITY; LARGE-GRAIN; N-CHANNEL; POLYCRYSTALLINE; PREFERRED ORIENTATIONS; SUBTHRESHOLD;

GALLIUM; GRAIN SIZE AND SHAPE; INDIUM; THIN FILMS;

THIN FILM TRANSISTORS;

EID: 84856065597     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.5.011102     Document Type: Article

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