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Volumn 2, Issue 2, 2009, Pages

Improvement of InGaZnO4 thin film transistors characteristics utilizing excimer laser annealing

Author keywords

[No Author keywords available]

Indexed keywords

EXCIMER LASERS; GAS LASERS; LASERS; THIN FILM DEVICES; TRANSISTORS;

EID: 60349115985     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.2.021102     Document Type: Article
Times cited : (52)

References (13)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.