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Volumn 2, Issue 2, 2009, Pages
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Improvement of InGaZnO4 thin film transistors characteristics utilizing excimer laser annealing
c
NEC CORPORATION
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
EXCIMER LASERS;
GAS LASERS;
LASERS;
THIN FILM DEVICES;
TRANSISTORS;
EXCIMER;
EXCIMER LASER ANNEALING;
FURNACE ANNEALING;
ORDER OF MAGNITUDES;
PLASTIC SUBSTRATES;
ROOM TEMPERATURES;
THERMAL DAMAGES;
THIN FILM TRANSISTORS;
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EID: 60349115985
PISSN: 18820778
EISSN: 18820786
Source Type: Journal
DOI: 10.1143/APEX.2.021102 Document Type: Article |
Times cited : (52)
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References (13)
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