Thin-film transistors fabricated by low-temperature process based on Ga- and Zn-free amorphous oxide semiconductor

Applied Physics Letters

Volumn 102, Issue 10, 2013, Pages

  Aikawa, Shinya ^a   Darmawan, Peter ^a   Yanagisawa, Keiichi ^b   Nabatame, Toshihide ^a   Abe, Yoshiyuki ^c   Tsukagoshi, Kazuhito ^a,b  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b RIKEN   (Japan)

^c SUMITOMO METAL MINING CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS OXIDE SEMICONDUCTOR (AOS); DC MAGNETRON SPUTTERING; FIELD-EFFECT MOBILITIES; INDIUM-TUNGSTEN-OXIDE; LOW-TEMPERATURE PROCESS; POST DEPOSITION ANNEALING; SOURCE AND DRAIN ELECTRODES; THIN-FILM TRANSISTOR (TFTS);

GOLD; GOLD DEPOSITS; THIN FILM TRANSISTORS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

AMORPHOUS FILMS;

EID: 84875159201     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4794903     Document Type: Article

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