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Applied Physics Letters

Volumn 102, Issue 10, 2013, Pages

Device performance and bias instability of Ta doped InZnO thin film transistor as a function of process pressure

(4) Park, Hyun Woo a Kim, Boo Kyoung a Park, Jin Seong b Chung, Kwun Bum a

a Dankook University (South Korea)

b Hanyang University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION-BAND MINIMUM; DEPOSITION PROCESS; DEVICE PERFORMANCE; ELECTRICAL CHARACTERISTIC; ENERGY DIFFERENCES; PHYSICAL STRUCTURES; RADIO FREQUENCIES; THIN-FILM TRANSISTOR (TFTS);

CONDUCTION BANDS; DEPOSITION; ELECTRONIC STRUCTURE;

THIN FILM TRANSISTORS;

EID: 84875173148 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4794941 Document Type: Article

Times cited : (43)

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