Localized tail state distribution in amorphous oxide transistors deduced from low temperature measurements

Applied Physics Letters

Volumn 101, Issue 11, 2012, Pages

  Lee, Sungsik ^a   Nathan, Arokia ^b  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS OXIDES; CHANNEL LAYERS; FIELD-EFFECT MOBILITIES; GATE VOLTAGES; LOW TEMPERATURES; LOW-TEMPERATURE MEASUREMENTS; PERCOLATION THRESHOLDS; STATE DISTRIBUTIONS; STATE ENERGY; TEST DEVICE; TRAP-LIMITED CONDUCTION; TRAPPED CARRIERS;

ACTIVATION ENERGY; TEMPERATURE;

TEMPERATURE MEASUREMENT;

EID: 84866339149     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4751861     Document Type: Article

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