A compact model for binary oxides-based memristive interfaces

Journal of Physics D: Applied Physics

Volumn 46, Issue 41, 2013, Pages

  Ghenzi, Néstor ^a   Sánchez, María José ^b   Levy, Pablo ^a  

^a DEPARTAMENTO DE FÍSICA   (Argentina)

^b INSTITUTO BALSEIRO   (Argentina)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; COMPACT MODEL; CROSSBAR ARRAYS; DEGRADATION PROCESS; MODEL-BASED OPC; RESISTANCE STATE; RESISTIVE SWITCHING;

ELECTRIC FIELDS;

INTERFACE STATES;

EID: 84885163082     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/46/41/415101     Document Type: Article

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