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Applied Physics Letters

Volumn 98, Issue 12, 2011, Pages

Asymmetric pulsing for reliable operation of titanium/manganite memristors

(7) Gomez Marlasca, F a Ghenzi, N a Stoliar, P a,b Sanchez M J c Rozenberg, M J d,e Leyva, G a Levy, P a

a DEPARTAMENTO DE FÍSICA (Argentina)

b UNIVERSIDAD NACIONAL DE SAN MARTÍN (Argentina)

c CENTRO ATÓMICO BARILOCHE (Argentina)

d UNIVERSITÉ PARIS SUD (France)

e UNIVERSIDAD DE BUENOS AIRES (Argentina)

Author keywords

[No Author keywords available]

Indexed keywords

DETRIMENTAL EFFECTS; DRIFT-FREE; MEMORY CELL; NUMERICAL MODELS; RELIABLE OPERATION; RESET PULSE; RESISTANCE VALUES; SWITCHING CYCLES;

MANGANESE OXIDE; OXYGEN; TITANIUM;

OXYGEN VACANCIES;

EID: 79953900798 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3565431 Document Type: Article

Times cited : (17)

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