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Journal of Applied Physics

Volumn 107, Issue 9, 2010, Pages

Hysteresis switching loops in Ag-manganite memristive interfaces

(5) Ghenzi, N a Sanchez M J b Gomez Marlasca, F a Levy, P a Rozenberg, M J c,d

a DEPARTAMENTO DE FÍSICA (Argentina)

b CENTRO ATÓMICO BARILOCHE (Argentina)

c UNIVERSITÉ PARIS SUD (France)

d UNIVERSIDAD DE BUENOS AIRES (Argentina)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED ELECTRIC FIELD; HYSTERESIS SWITCHING; INITIAL STATE; MICROSCOPIC MECHANISMS; REALISTIC MODEL; RESISTANCE STATE; RESISTIVE SWITCHING; SWITCHING THRESHOLDS; TRANSITION-METAL OXIDES;

COMPUTER SIMULATION; ELECTRIC FIELDS; HYSTERESIS; MANGANESE OXIDE; OXYGEN; OXYGEN VACANCIES; TRANSITION METAL COMPOUNDS; TRANSITION METALS; VACANCIES;

SWITCHING;

EID: 79251526171 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3372617 Document Type: Article

Times cited : (35)

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