ZnO-based one diode-one resistor device structure for crossbar memory applications

Applied Physics Letters

Volumn 100, Issue 15, 2012, Pages

  Liu, Zi Jheng ^a   Gan, Jon Yiew ^a   Yew, Tri Rung ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CROSS-BAR MEMORIES; DEVICE STRUCTURES; MEMRISTOR; ROOM TEMPERATURE; SPUTTERING PROCESS;

DIODES; ZINC OXIDE;

RESISTORS;

EID: 84859788454     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3701722     Document Type: Article

References (20)

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