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Volumn 103, Issue 12, 2013, Pages

Defect recombination induced by density-activated carrier diffusion in nonpolar InGaN quantum wells

(10) Yang, Fan a Zhang, Chunfeng a Shi, Chentian a Joo Park, Min b Seop Kwak, Joon b Jung, Sukkoo c Choi, Yoon Ho c Wu, Xuewei a Wang, Xiaoyong a Xiao, Min a,d

a NANJING UNIVERSITY (China)

b Sunchon National University (South Korea)

c LG Electronics Inc (South Korea)

d UNIVERSITY OF ARKANSAS (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND-EDGE EMISSIONS; CARRIER DIFFUSIONS; DEFECT RECOMBINATIONS; DEFECT-RELATED EMISSION; EFFICIENCY DROOPS; EXCITATION DENSITY; INGAN QUANTUM WELLS; SINGLE QUANTUM WELL;

DEFECTS; DIFFUSION; LIGHT EMITTING DIODES; SEMICONDUCTOR QUANTUM WELLS;

DEFECT DENSITY;

EID: 84884825230 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4821454 Document Type: Article

Times cited : (5)

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