Multiple-component photoluminescence decay caused by carrier transport in InGaN/GaN multiple quantum wells with indium aggregation structures

Applied Physics Letters

Volumn 80, Issue 23, 2002, Pages 4375-4377

  Feng, Shih Wei ^a   Cheng, Yung Chen ^a   Chung, Yi Yin ^a   Yang, C C ^a   Mao, Ming Hua ^a   Lin, Yen Sheng ^b   Ma, Kung Jeng ^b   Chyi, Jen Inn ^c  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NATIONAL DEFENSE UNIVERSITY   (Taiwan)

^c NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AGGREGATION STRUCTURE; CARRIER SUPPLY; CARRIER TRANSPORT PROCESS; DECAY TIME; INGAN/GAN; INGAN/GAN QUANTUM WELL; LOCALIZED STATE; PHOTOLUMINESCENCE DECAY; PL INTENSITY; POTENTIAL BARRIERS; TIME-RESOLVED PHOTOLUMINESCENCE;

CARRIER TRANSPORT; PHOTOLUMINESCENCE; QUANTUM CHEMISTRY; SEMICONDUCTOR DEVICE STRUCTURES; SPATIAL DISTRIBUTION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 79956029099     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1484546     Document Type: Article

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