Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells

Applied Physics Letters

Volumn 80, Issue 6, 2002, Pages 977-979

  Kuokstis, E ^a   Yang, J W ^a   Simin, G ^a   Khan, M Asif ^a   Gaska, R ^b   Shur, M S ^b,c  

^a The Department of Mechanical Engineering   (United States)

^b SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

^c RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BLUE SHIFT; DIFFERENT MECHANISMS; EDGE EMISSIONS; GAN EPILAYERS; INGAN EPILAYERS; INGAN/GAN; LOCALIZED STATE; PEAK EMISSIONS; PL SPECTRA; QUANTUM WELL; ROOM TEMPERATURE;

ELECTRIC FIELDS; EPILAYERS; GALLIUM NITRIDE; PHOTOEXCITATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 79956060178     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1433164     Document Type: Article

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