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Volumn 110, Issue 17, 2013, Pages

Direct measurement of auger electrons emitted from a semiconductor light-emitting diode under electrical injection: Identification of the dominant mechanism for efficiency droop

(5) Iveland, Justin a Martinelli, Lucio b Peretti, Jacques b Speck, James S a Weisbuch, Claude a,b

a University of California (United States)

b LABORATOIRE DE PHYSIQUE DE LA MATIÈRE CONDENSÉE (France)

Author keywords

[No Author keywords available]

Indexed keywords

DIRECT MEASUREMENT; DOMINANT MECHANISM; ELECTRICAL INJECTION; ELECTROLUMINESCENCE EFFICIENCIES; ELECTRON EMISSION SPECTRA; GAN LIGHT-EMITTING DIODES; HIGH-ENERGY ELECTRON; INGAN QUANTUM WELLS;

AUGERS; DIODES; ELECTRON EMISSION; EMISSION SPECTROSCOPY; SEMICONDUCTOR DIODES;

LIGHT EMITTING DIODES;

EID: 84877751647 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.110.177406 Document Type: Article

Times cited : (591)

References (27)

1
- 0020100455
- IEJQA7 0018-9197 10.1109/JQE.1982.1071543
- See, e.g., A. Sugimura, IEEE J. Quantum Electron. 18, 352 (1982). IEJQA7 0018-9197 10.1109/JQE.1982.1071543
- (1982) IEEE J. Quantum Electron. , vol.18 , pp. 352
- Sugimura, A.¹

2
- 34548180960
- JAPIAU 0021-8979 10.1063/1.1736034
- W. Shockley and H. J. Queisser, J. Appl. Phys. 32, 510 (1961). JAPIAU 0021-8979 10.1063/1.1736034
- (1961) J. Appl. Phys. , vol.32 , pp. 510
- Shockley, W.¹ Queisser, H.J.²

3
- 35148864428
- Auger recombination in InGaN measured by photoluminescence
- DOI 10.1063/1.2785135
- Y. C. Shen, G. O. Müller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, Appl. Phys. Lett. 91, 141101 (2007). APPLAB 0003-6951 10.1063/1.2785135 (Pubitemid 47534188)
- (2007) Applied Physics Letters , vol.91 , Issue.14 , pp. 141101
- Shen, Y.C.¹ Mueller, G.O.² Watanabe, S.³ Gardner, N.F.⁴ Munkholm, A.⁵ Krames, M.R.⁶

4
- 77955415098
- SSELA5 0038-1101 10.1016/j.sse.2010.05.019
- H. Zhao, G. Liu, R. A. Arif, and N. Tansu, Solid State Electron. 54, 1119 (2010). SSELA5 0038-1101 10.1016/j.sse.2010.05.019
- (2010) Solid State Electron. , vol.54 , pp. 1119
- Zhao, H.¹ Liu, G.² Arif, R.A.³ Tansu, N.⁴

5
- 79960519806
- OPEXFF 1094-4087 10.1364/OE.19.014182 182
- L. Wang, C. Lu, J. Lu, L. Liu, N. Liu, Y. Chen, Y. Zhang, E. Gu, and X. Hu, Opt. Express 19, 14 182 (2011). OPEXFF 1094-4087 10.1364/OE.19.014182
- (2011) Opt. Express , vol.19 , pp. 14
- Wang, L.¹ Lu, C.² Lu, J.³ Liu, L.⁴ Liu, N.⁵ Chen, Y.⁶ Zhang, Y.⁷ Gu, E.⁸ Hu, X.⁹

6
- 84860525467
- JAPIAU 0021-8979 10.1063/1.3703062
- S. Hammersley, D. Watson-Parris, P. Dawson, M. J. Godfrey, T. J. Badcock, M. J. Kappers, C. McAleese, R. A. Oliver, and C. J. Humphreys, J. Appl. Phys. 111, 083512 (2012). JAPIAU 0021-8979 10.1063/1.3703062
- (2012) J. Appl. Phys. , vol.111 , pp. 083512
- Hammersley, S.¹ Watson-Parris, D.² Dawson, P.³ Godfrey, M.J.⁴ Badcock, T.J.⁵ Kappers, M.J.⁶ McAleese, C.⁷ Oliver, R.A.⁸ Humphreys, C.J.⁹

7
- 77953574246
- APPLAB 0003-6951 10.1063/1.3446889
- J. Hader, J. V. Moloney, and S. W. Koch, Appl. Phys. Lett. 96, 221106 (2010). APPLAB 0003-6951 10.1063/1.3446889
- (2010) Appl. Phys. Lett. , vol.96 , pp. 221106
- Hader, J.¹ Moloney, J.V.² Koch, S.W.³

8
- 58149492901
- APPLAB 0003-6951 10.1063/1.3058687
- J. Xu, Appl. Phys. Lett. 94, 011113 (2009). APPLAB 0003-6951 10.1063/1.3058687
- (2009) Appl. Phys. Lett. , vol.94 , pp. 011113
- Xu, J.¹

9
- 84860272871
- SSTEET 0268-1242 10.1088/0268-1242/27/5/055013
- Y. Y. Kudryk, A. K. Tkachenko, and A. V. Zinovchuk, Semicond. Sci. Technol. 27, 055013 (2012). SSTEET 0268-1242 10.1088/0268-1242/27/5/055013
- (2012) Semicond. Sci. Technol. , vol.27 , pp. 055013
- Kudryk, Y.Y.¹ Tkachenko, A.K.² Zinovchuk, A.V.³

10
- 84859540207
- APPLAB 0003-6951 10.1063/1.3698113
- H.-Y. Ryu, D.-S. Shin, and J.-I. Shim, Appl. Phys. Lett. 100, 131109 (2012). APPLAB 0003-6951 10.1063/1.3698113
- (2012) Appl. Phys. Lett. , vol.100 , pp. 131109
- Ryu, H.-Y.¹ Shin, D.-S.² Shim, J.-I.³

11
- 84865506014
- APPLAB 0003-6951 10.1063/1.4747532
- Y.-R. Wu, R. Shivaraman, K.-C. Wang, and J. S. Speck, Appl. Phys. Lett. 101, 083505 (2012). APPLAB 0003-6951 10.1063/1.4747532
- (2012) Appl. Phys. Lett. , vol.101 , pp. 083505
- Wu, Y.-R.¹ Shivaraman, R.² Wang, K.-C.³ Speck, J.S.⁴

12
- 37149027248
- Blue-emitting InGaN-GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200 A cm2
- DOI 10.1063/1.2807272
- N. F. Gardner, G. O. Müller, Y. C. Shen, G. Chen, S. Watanabe, W. Götz, and M. R. Krames, Appl. Phys. Lett. 91, 243506 (2007). APPLAB 0003-6951 10.1063/1.2807272 (Pubitemid 350262046)
- (2007) Applied Physics Letters , vol.91 , Issue.24 , pp. 243506
- Gardner, N.F.¹ Muller, G.O.² Shen, Y.C.³ Chen, G.⁴ Watanabe, S.⁵ Gotz, W.⁶ Krames, M.R.⁷

13
- 3843146014
- PRLTAO 0031-9007 10.1103/PhysRevLett.18.597
- R. C. Eden, J. L. Moll, and W. E. Spicer, Phys. Rev. Lett. 18, 597 (1967). PRLTAO 0031-9007 10.1103/PhysRevLett.18.597
- (1967) Phys. Rev. Lett. , vol.18 , pp. 597
- Eden, R.C.¹ Moll, J.L.² Spicer, W.E.³

14
- 0000840067
- PRBMDO 0163-1829 10.1103/PhysRevB.31.3859
- H.-J. Drouhin, C. Hermann, and G. Lampel, Phys. Rev. B 31, 3859 (1985); PRBMDO 0163-1829 10.1103/PhysRevB.31.3859
- (1985) Phys. Rev. B , vol.31 , pp. 3859
- Drouhin, H.-J.¹ Hermann, C.² Lampel, G.³

15
- 33744594974
- PRBMDO 0163-1829 10.1103/PhysRevB.41.1266
- Y. Lassailly, P. Chiaradia, C. Hermann, and G. Lampel, Phys. Rev. B 41, 1266 (1990); PRBMDO 0163-1829 10.1103/PhysRevB.41.1266
- (1990) Phys. Rev. B , vol.41 , pp. 1266
- Lassailly, Y.¹ Chiaradia, P.² Hermann, C.³ Lampel, G.⁴

16
- 35949011254
- PRBMDO 0163-1829 10.1103/PhysRevB.44.7999
- J. Peretti, H.-J. Drouhin, D. Paget, and A. Mircea, Phys. Rev. B 44, 7999 (1991). PRBMDO 0163-1829 10.1103/PhysRevB.44.7999
- (1991) Phys. Rev. B , vol.44 , pp. 7999
- Peretti, J.¹ Drouhin, H.-J.² Paget, D.³ Mircea, A.⁴

17
- 0018443533
- Energy loss and escape depth of hot electrons from shallow P-N junctions in silicon
- DOI 10.1063/1.326126
- I. Shahriary, J. R. Schwank, and F. G. Allen, J. Appl. Phys. 50, 1428 (1979). JAPIAU 0021-8979 10.1063/1.326126 (Pubitemid 9450165)
- (1979) J Appl Phys , vol.50 , Issue.3 , pp. 1428-1438
- Shahriary, I.¹ Schwank, J.R.² Allen, F.G.³

18
- 4243796406
- PRLTAO 0031-9007 10.1103/PhysRevLett.64.1682
- J. Peretti, H.-J. Drouhin, and D. Paget, Phys. Rev. Lett. 64, 1682 (1990). PRLTAO 0031-9007 10.1103/PhysRevLett.64.1682
- (1990) Phys. Rev. Lett. , vol.64 , pp. 1682
- Peretti, J.¹ Drouhin, H.-J.² Paget, D.³

19
- 4944264304
- APPLAB 0003-6951 10.1063/1.1785865
- Z. Liu, F. Machuca, P. Pianetta, W. E. Spicer, and R. F. W. Pease, Appl. Phys. Lett. 85, 1541 (2004). APPLAB 0003-6951 10.1063/1.1785865
- (2004) Appl. Phys. Lett. , vol.85 , pp. 1541
- Liu, Z.¹ MacHuca, F.² Pianetta, P.³ Spicer, W.E.⁴ Pease, R.F.W.⁵

20
- 0037351556
- JAPIAU 0021-8979 10.1063/1.1543633
- R. Collazo, R. Schlesser, A. Roskowski, P. Miraglia, R. F. Davis, and Z. Sitar, J. Appl. Phys. 93, 2765 (2003). JAPIAU 0021-8979 10.1063/1.1543633
- (2003) J. Appl. Phys. , vol.93 , pp. 2765
- Collazo, R.¹ Schlesser, R.² Roskowski, A.³ Miraglia, P.⁴ Davis, R.F.⁵ Sitar, Z.⁶

21
- 30744433587
- Optical study of hot electron transport in GaN: Signatures of the hot-phonon effect
- DOI 10.1063/1.2163709, 022103
- K. Wang, J. Simon, N. Goel, and D. Jena, Appl. Phys. Lett. 88, 022103 (2006). APPLAB 0003-6951 10.1063/1.2163709 (Pubitemid 43100108)
- (2006) Applied Physics Letters , vol.88 , Issue.2 , pp. 1-3
- Wang, K.¹ Simon, J.² Goel, N.³ Jena, D.⁴

22
- 8744293855
- Low-temperature method of cleaning p-GaN(0001) surfaces for photoemitters with effective negative electron affinity
- DOI 10.1134/1.1809437
- O. E. Tereshchenko, G. É. Shaibler, A. S. Yaroshevich, S. V. Shevelev, A. S. Terekhov, V. V. Lundin, E. E. Zavarin, and A. I. Besyul'kin, Phys. Solid State 46, 1949 (2004). PSOSED 1063-7834 10.1134/1.1809437 (Pubitemid 39526368)
- (2004) Physics of the Solid State , vol.46 , Issue.10 , pp. 1949-1953
- Tereshchenko, O.E.¹ Shaibler, G.E.² Yaroshevich, A.S.³ Shevelev, S.V.⁴ Terekhov, A.S.⁵ Lundin, V.V.⁶ Zavarin, E.E.⁷ Besyul'kin, A.I.⁸

23
- 79955380032
- APPLAB 0003-6951 10.1063/1.3570656
- E. Kioupakis, P. Rinke, K. T. Delaney, and C. G. Van de Walle, Appl. Phys. Lett. 98, 161107 (2011). APPLAB 0003-6951 10.1063/1.3570656
- (2011) Appl. Phys. Lett. , vol.98 , pp. 161107
- Kioupakis, E.¹ Rinke, P.² Delaney, K.T.³ Van De Walle, C.G.⁴

24
- 84863676539
- APPLAB 0003-6951 10.1063/1.4733353
- F. Bertazzi, M. Goano, and E. Bellotti, Appl. Phys. Lett. 101, 011111 (2012). APPLAB 0003-6951 10.1063/1.4733353
- (2012) Appl. Phys. Lett. , vol.101 , pp. 011111
- Bertazzi, F.¹ Goano, M.² Bellotti, E.³

25
- 84870270755
- SSTEET 0268-1242 10.1088/0268-1242/27/12/125003
- F. Gütle, Semicond. Sci. Technol. 27, 125003 (2012). SSTEET 0268-1242 10.1088/0268-1242/27/12/125003
- (2012) Semicond. Sci. Technol. , vol.27 , pp. 125003
- Gütle, F.¹

26
- 33847657956
- Time-resolved intervalley transitions in GaN single crystals
- DOI 10.1063/1.2496399
- S. Wu, P. Geiser, J. Jun, J. Karpinski, D. Wang, and R. Sobolewskia, J. Appl. Phys. 101, 043701 (2007). JAPIAU 0021-8979 10.1063/1.2496399 (Pubitemid 46362928)
- (2007) Journal of Applied Physics , vol.101 , Issue.4 , pp. 043701
- Wu, S.¹ Geiser, P.² Jun, J.³ Karpinski, J.⁴ Wang, D.⁵ Sobolewski, R.⁶

27
- 79955988692
- Electron emission from GaN n-p junctions
- DOI 10.1063/1.1514824
- J. L. Shaw, R. E. Treece, D. Patel, C. S. Menoni, J. R. Smith, and J. I. Pankove, Appl. Phys. Lett. 81, 3076 (2002). APPLAB 0003-6951 10.1063/1.1514824 (Pubitemid 35328472)
- (2002) Applied Physics Letters , vol.81 , Issue.16 , pp. 3076
- Shaw, J.L.¹ Treece, R.E.² Patel, D.³ Menoni, C.S.⁴ Smith, J.R.⁵ Pankove, J.I.⁶

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