High excitation carrier density recombination dynamics of InGaN/GaN quantum well structures: Possible relevance to efficiency droop

Applied Physics Letters

Volumn 102, Issue 2, 2013, Pages

  Davies, M J ^a   Badcock, T J ^a   Dawson, P ^a   Kappers, M J ^b   Oliver, R A ^b   Humphreys, C J ^b  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER EMISSION; EXCITATION DENSITY; EXCITATION POWER DENSITY; INGAN/GAN QUANTUM WELL; INTERNAL QUANTUM EFFICIENCY; NON-RADIATIVE LOSS; RECOMBINATION DYNAMICS;

OPTICAL PROPERTIES; SEMICONDUCTOR QUANTUM WELLS;

EFFICIENCY;

EID: 84872692601     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4781398     Document Type: Article

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