Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes

Applied Physics Letters

Volumn 100, Issue 11, 2012, Pages

  Akyol, F ^a   Nath, D N ^a   Krishnamoorthy, S ^a   Park, P S ^a   Rajan, S ^a  

^a The Ohio State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER INJECTION; DOUBLE QUANTUM WELL; ELECTRON BLOCKING LAYER; ELECTRON OVERFLOW; EXTERNAL QUANTUM EFFICIENCY; GREEN LIGHT EMITTING DIODES; INGAN/GAN GREEN LIGHT EMITTING DIODE; N-POLAR; PLASMA ASSISTED MOLECULAR BEAM EPITAXY; POTENTIAL BARRIERS; REVERSE POLARIZATION;

GALLIUM NITRIDE;

LIGHT EMITTING DIODES;

EID: 84859997265     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3694967     Document Type: Article

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