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Applied Physics Letters

Volumn 95, Issue 12, 2009, Pages

Efficiency retention at high current injection levels in m -plane InGaN light emitting diodes

(9) Li, X a Ni, X a Lee, J a Wu, M a Ozgur U a Morko H a Paskova, T b Mulholland, G b Evans, K R b

a Virginia Commonwealth University (United States)

b KYMA TECHNOLOGIES INC (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; CURRENT INJECTIONS; EXTERNAL QUANTUM EFFICIENCY; FREESTANDING GAN; HIGH CURRENTS; HIGH INJECTION; HIGH QUANTUM EFFICIENCY; HOLE CARRIERS; HOLE TRANSPORTS; INDUCED FIELD; INTERNAL QUANTUM EFFICIENCY; LIGHT HOLES; LIGHTING APPLICATIONS; M-PLANE; TEMPERATURE DEPENDENT PHOTOLUMINESCENCES;

BIOACTIVITY; GALLIUM NITRIDE; HOLE CONCENTRATION; LIGHT EMISSION; LIGHT EMITTING DIODES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS;

QUANTUM EFFICIENCY;

EID: 70349684801 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3236538 Document Type: Article

Times cited : (64)

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