Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm

Applied Physics Letters

Volumn 82, Issue 17, 2003, Pages 2755-2757

  Pope, I A ^a   Smowton, P M ^a   Blood, P ^a   Thomson, J D ^a   Kappers, M J ^b   Humphreys, C J ^b  

^a CARDIFF UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; IONIZATION; LIGHT EMITTING DIODES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING;

CARRIER LEAKAGE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0038636161     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1570515     Document Type: Article

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