Lateral growth of Ge nanocrystals in a thin Ge-rich silicon nitride layer

Journal of Crystal Growth

Volumn 383, Issue , 2013, Pages 36-42

  Lee, Sammy ^a   Huang, Shujuan ^a   Conibeer, Gavin ^a   Green, Martin ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

A. Magnetron sputter; A. Post thermal crystallisation; B. Amorphous silicon nitride matrix; B. Germanium nanocrystals

Indexed keywords

FURNACE ANNEALING; GERMANIUM NANOCRYSTALS; NEAR STOICHIOMETRIC; OPTICAL ABSORPTION EDGE; OPTICAL CHARACTERISATION; PHONON CONFINEMENT; PROCESSING CONDITION; RF-MAGNETRON SPUTTERING;

AMORPHOUS SILICON; FILM GROWTH; MULTILAYER FILMS; NANOCRYSTALS; PHASE SEPARATION; PHONONS; SILICON; SILICON NITRIDE;

GERMANIUM;

EID: 84884196399     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2013.08.012     Document Type: Article

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