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Volumn 519, Issue 16, 2011, Pages 5408-5412

Formation and photoluminescence of Si nanocrystals in controlled multilayer structure comprising of Si-rich nitride and ultrathin silicon nitride barrier layers

Author keywords

Multilayer; Photoluminescence; Silicon nanocrystal; Silicon nitride; Tandem solar cell

Indexed keywords

ALTERNATING LAYERS; ANNEALING PROCESS; BAND GAP ENGINEERING; BARRIER LAYERS; BLUE SHIFT; ELECTRICAL CONDUCTIVITY; HIGH-TEMPERATURE ANNEALING; INTER-DIFFUSION; LAYERED STRUCTURES; MULTILAYER STRUCTURES; PHOTOVOLTAIC APPLICATIONS; PL EMISSION; PL INTENSITY; POST-ANNEAL; SI NANOCRYSTAL; SILICON NANOCRYSTAL; TANDEM SOLAR CELL; ULTRA-THIN BARRIERS; ULTRATHIN SILICON; X RAY REFLECTION; X-RAY DIFFRACTION MEASUREMENTS; X-RAY PHOTOELECTRON SPECTROSCOPY SPECTRA;

EID: 79958012405     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.02.060     Document Type: Article
Times cited : (46)

References (29)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.