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Volumn 519, Issue 16, 2011, Pages 5408-5412
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Formation and photoluminescence of Si nanocrystals in controlled multilayer structure comprising of Si-rich nitride and ultrathin silicon nitride barrier layers
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Author keywords
Multilayer; Photoluminescence; Silicon nanocrystal; Silicon nitride; Tandem solar cell
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Indexed keywords
ALTERNATING LAYERS;
ANNEALING PROCESS;
BAND GAP ENGINEERING;
BARRIER LAYERS;
BLUE SHIFT;
ELECTRICAL CONDUCTIVITY;
HIGH-TEMPERATURE ANNEALING;
INTER-DIFFUSION;
LAYERED STRUCTURES;
MULTILAYER STRUCTURES;
PHOTOVOLTAIC APPLICATIONS;
PL EMISSION;
PL INTENSITY;
POST-ANNEAL;
SI NANOCRYSTAL;
SILICON NANOCRYSTAL;
TANDEM SOLAR CELL;
ULTRA-THIN BARRIERS;
ULTRATHIN SILICON;
X RAY REFLECTION;
X-RAY DIFFRACTION MEASUREMENTS;
X-RAY PHOTOELECTRON SPECTROSCOPY SPECTRA;
ANNEALING;
DIFFUSION BARRIERS;
ELECTRIC CONDUCTIVITY;
MULTILAYERS;
NANOCRYSTALS;
PASSIVATION;
PHOTOELECTRON SPECTROSCOPY;
PHOTOLUMINESCENCE;
SILICON NITRIDE;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY DIFFRACTION;
X RAY PHOTOELECTRON SPECTROSCOPY;
X RAYS;
SILICON;
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EID: 79958012405
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2011.02.060 Document Type: Article |
Times cited : (46)
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References (29)
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