Germanium diffusion and nanocrystal formation in silicon oxide on silicon substrate under rapid thermal annealing

Applied Physics Letters

Volumn 86, Issue 14, 2005, Pages 1-3

  Choi, W K ^a   Ho, V ^a   Ng, V ^a   Ho, Y W ^a   Ng, S P ^a   Chim, W K ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

FRINGE SEPARATION; NANOCRYSTAL; STRUCTURAL QUALITY; THERMAL OXIDE SYSTEMS;

CRYSTAL GROWTH; DIFFUSION; NANOSTRUCTURED MATERIALS; POLYCRYSTALLINE MATERIALS; RAPID THERMAL ANNEALING; SEMICONDUCTING SILICON; SILICA; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

GERMANIUM;

EID: 17544367786     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1891290     Document Type: Article

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