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Journal of Applied Physics

Volumn 109, Issue 3, 2011, Pages

Phonon confinement in Ge nanocrystals in silicon oxide matrix

(5) Jie, Yiaxiong a Wee, A T S a Huan, C H A b Shen, Z X b Choi, W K a

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

b NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ELASTIC WAVES; GERMANIUM COMPOUNDS; NANOCRYSTALS; PHONONS; SILICON COMPOUNDS; SILICON OXIDES;

ELECTRON PHONON SCATTERING; MICROSCOPIC MODELING; MOMENTUM CONSERVATIONS; PHENOMENOLOGICAL MODELING; PHONON CONFINEMENT EFFECT; SPHERICAL NANOCRYSTALS; STRESS GENERATION AND RELAXATIONS; WEIGHTING FUNCTIONS;

AMORPHOUS SILICON;

EID: 79951828814 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3503444 Document Type: Article

Times cited : (19)

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