Formation and stability of germanium oxide induced by atomic oxygen exposure

Materials Science in Semiconductor Processing

Volumn 9, Issue 4-5 SPEC. ISS., 2006, Pages 673-678

  Molle, Alessandro ^a   Bhuiyan, Md Nurul Kabir ^a   Tallarida, Grazia ^a   Fanciulli, Marco ^a  

^a LABORATORIO MDM   (Italy)

Author keywords

Atomic oxygen; Germanium oxide; XPS

Indexed keywords

ANNEALING; OXYGEN; STOICHIOMETRY; X RAY PHOTOELECTRON SPECTROSCOPY;

GERMANIUM OXIDE; ROOM TEMPERATURE; SUB-STOICHIOMETRIC OXIDE;

SEMICONDUCTING GERMANIUM COMPOUNDS;

EID: 33845230979     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.09.002     Document Type: Article

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