Pure germanium nitride formation by atomic nitrogen radicals for application to Ge metal-insulator-semiconductor structures

Journal of Applied Physics

Volumn 100, Issue 1, 2006, Pages

  Maeda, Tatsuro ^a   Yasuda, Tetsuji ^a   Nishizawa, Masayasu ^a   Miyata, Noriyuki ^a   Morita, Yukinori ^a   Takagi, Shinichi ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; FREE RADICALS; METAL INSULATOR BOUNDARIES; PASSIVATION; SEMICONDUCTOR DEVICES;

GERMANIUM NITRIDE; METAL-INSULATOR-SEMICONDUCTOR STRUCTURES; NITRIDATION; NITROGEN RADICALS;

GERMANIUM COMPOUNDS;

EID: 33746191673     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2206395     Document Type: Article

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