Quantum confinement in Si and Ge nanostructures

Journal of Applied Physics

Volumn 111, Issue 3, 2012, Pages

  Barbagiovanni, E G ^a   Lockwood, D J ^b   Simpson, P J ^a   Goncharova, L V ^a  

^a UNIVERSITY OF WESTERN ONTARIO   (Canada)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

BAND EDGE; CONDUCTION BAND EDGE; CONFINEMENT MODEL; CRYSTALLINE NANOSTRUCTURE; CRYSTALLINITIES; EFFECTIVE MASS; EFFECTIVE-MASS THEORY; GE NANOSTRUCTURES; QUANTUM SYSTEM; QUANTUM WELL; SPATIAL CONFINEMENT; SPATIAL DELOCALIZATION; STRONG CONFINEMENT; THEORETICAL MODELS; X RAY PHOTOEMISSION SPECTROSCOPY;

AMORPHOUS MATERIALS; CRYSTALLINE MATERIALS; NANOSTRUCTURES; PHOTOELECTRON SPECTROSCOPY; QUANTUM ELECTRONICS; QUANTUM OPTICS; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR QUANTUM WELLS; SILICON; TRANSMISSION ELECTRON MICROSCOPY; WIRE; X RAY ABSORPTION SPECTROSCOPY; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

QUANTUM CONFINEMENT;

EID: 84857412786     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3680884     Document Type: Article

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