Mechanisms of void formation in Ge implanted SiO2 films

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 207, Issue 4, 2003, Pages 424-433

  Marstein, E S ^a   Gunnaes A E ^a   Serincan, U ^b   Jorgensen S ^a   Olsen, A ^a   Turan, R ^b   Finstad, T G ^a  

^a UNIVERSITY OF OSLO   (Norway)

^b MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

Author keywords

Germanium; Ion beam synthesis; Nanocrystals; Silicon dioxide; Voids

Indexed keywords

AMORPHOUS FILMS; ANNEALING; DIFFUSION; ELECTRON BEAMS; ENERGY DISPERSIVE SPECTROSCOPY; MOISTURE; NANOSTRUCTURED MATERIALS; OXYGEN; SECONDARY ION MASS SPECTROMETRY; SILICA; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

VOID FORMATION;

GERMANIUM;

EID: 0037732817     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(03)00965-0     Document Type: Article

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