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Journal of Physics D: Applied Physics

Volumn 46, Issue 2, 2012, Pages

Sputter-grown Si quantum dot nanostructures for tandem solar cells

(2) Huang, Shujuan a Conibeer, Gavin a

a UNIVERSITY OF NEW SOUTH WALES (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI QD; BARRIER LAYERS; COSPUTTERING; COST EFFECTIVE; DIELECTRIC LAYER; DIELECTRIC MATRIXES; DOPANT CONCENTRATIONS; DOPING MECHANISM; EFFECTIVE DOPING; ELECTRONIC BAND GAPS; ENHANCED CONDUCTIVITY; IMPURITY INCORPORATION; MODIFIED INTERFACES; MOS STRUCTURE; P-N JUNCTION; PHOTOVOLTAIC; QUANTUM CONFINEMENT EFFECTS; SI QUANTUM DOT; SOLAR CELL MATERIALS; SUPER-LATTICE STRUCTURES; TANDEM SOLAR CELLS; THIN LAYERS; THIRD GENERATION; TUNABILITIES; UNIFORM SIZE;

NANOSTRUCTURED MATERIALS; OPEN CIRCUIT VOLTAGE; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR QUANTUM DOTS; SOLAR CELLS;

SILICON;

EID: 84871302987 PISSN: 00223727 EISSN: 13616463 Source Type: Journal
DOI: 10.1088/0022-3727/46/2/024003 Document Type: Article

Times cited : (31)

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