Reactive dc magnetron sputtering of (GeOx - SiO2) superlattices for Ge nanocrystal formation

Journal of Applied Physics

Volumn 107, Issue 3, 2010, Pages

  Zschintzsch, M ^a   Jeutter, N M ^a   Von Borany, J ^a   Krause, M ^a   Mucklich A ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; CHARGE TRANSPORT; DEPOSITION CONDITIONS; DEPOSITION TEMPERATURES; DIRECT TUNNELING; GE NANOCRYSTALS; IN-SITU; OXYGEN PARTIAL PRESSURE; PHOTOVOLTAIC APPLICATIONS; PROCESS WINDOW; REACTIVE DC MAGNETRON SPUTTERING; SMOOTH INTERFACE;

ANNEALING; MAGNETRONS; NANOCRYSTALS; OXYGEN; PARTIAL PRESSURE; PHASE INTERFACES; PHASE MODULATION; PHASE SEPARATION; POSITIVE IONS; RAMAN SPECTROSCOPY; SILICON COMPOUNDS; SIZE SEPARATION; SUPERLATTICES;

GERMANIUM;

EID: 76949107800     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3276184     Document Type: Article

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