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Applied Physics Letters

Volumn 96, Issue 26, 2010, Pages

Size controlled synthesis of Ge nanocrystals in SiO2 at temperatures below 400°C using magnetron sputtering

(4) Zhang, B a Shrestha, S a Green, M A a Conibeer, G a

a UNIVERSITY OF NEW SOUTH WALES (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

GE NANOCRYSTALS; LOW COSTS; LOW TEMPERATURE TECHNIQUES; LOW TEMPERATURES; MULTI-LAYERED; OXIDATION REACTIONS; SILICON PROCESS; SIZE CONTROLLED SYNTHESIS; TEMPERATURE WINDOW; UNDERLYING MECHANISM;

CRYSTALLITE SIZE; LOW TEMPERATURE PRODUCTION; NANOCRYSTALLINE ALLOYS; NANOCRYSTALS; SILICON COMPOUNDS; SILICON OXIDES; SYNTHESIS (CHEMICAL);

GERMANIUM;

EID: 77954336218 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3457864 Document Type: Article

Times cited : (45)

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