A hybrid model for the origin of photoluminescence from Ge nanocrystals in a SiO2 matrix

Semiconductor Science and Technology

Volumn 21, Issue 12, 2006, Pages 1691-1698

  Singha, A ^a   Roy, A ^a   Kabiraj, D ^b   Kanjilal, D ^b  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

^b INTER UNIVERSITY ACCELERATOR CENTRE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ION IMPLANTATION; MATHEMATICAL MODELS; PHOTOLUMINESCENCE; QUANTUM THEORY; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR GROWTH; SILICA;

HYBRID MODELS; QUANTUM CONFINEMENT; RAMAN MEASUREMENTS;

NANOSTRUCTURED MATERIALS;

EID: 33846880046     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/12/032     Document Type: Article

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