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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 29, Issue 3, 2011, Pages

Studies on Al/ ZrO2 /GaAs metal-oxide-semiconductor capacitors and determination of its electrical parameters in the frequency range of 10 kHz-1 MHz

(5) Kundu, Souvik a Roy, Sandipta a Banerji, P a Chakraborty, Supratic b Shripathi, T c

a INDIAN INSTITUTE OF TECHNOLOGY (India)

b SAHA INSTITUTE OF NUCLEAR PHYSICS (India)

c UGC DAE CONSORTIUM FOR SCIENTIFIC RESEARCH (India)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; GALLIUM ARSENIDE; GATE DIELECTRICS; GATES (TRANSISTOR); METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOS CAPACITORS; ORGANIC CHEMICALS; ORGANOMETALLICS; PASSIVATION; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DOPING; SOL-GEL PROCESS; SULFUR; ZIRCONIA; ZIRCONIUM; ZIRCONIUM ALLOYS;

AC CONDUCTIVITY; DIELECTRIC CHARACTERIZATION; DIELECTRIC LAYER; DOPING CONCENTRATION; ELECTRICAL PARAMETER; FREQUENCY DEPENDENT; FREQUENCY RANGES; GAAS; GAAS SUBSTRATES; GAAS SURFACES; INTERFACE STATE DENSITY; INTERFACE TRAP DENSITY; LOSS TANGENT; METAL-OXIDE- SEMICONDUCTORCAPACITORS; OXIDE CAPACITANCE; OXIDE LAYER; OXIDE THICKNESS; TEMPERATURE DEPENDENT; THREE ORDERS OF MAGNITUDE; TRANSMISSION PROBABILITIES;

GALLIUM ALLOYS;

EID: 79958086568 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3585608 Document Type: Article

Times cited : (29)

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