Improved electrical properties of Ge p-MOSFET with HfO2 gate dielectric by using TaOxNy interlayer

IEEE Electron Device Letters

Volumn 29, Issue 10, 2008, Pages 1155-1158

  Xu, J P ^a   Zhang, X F ^a   Li, C X ^b   Lai, P T ^b   Chan, C L ^b  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Germanium; High k; pMOSFET; TaON interlayer

Indexed keywords

ELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GATES (TRANSISTOR); GERMANIUM; HAFNIUM COMPOUNDS;

ELECTRICAL CHARACTERISTICS; ELECTRICAL PROPERTIES; HIGH-K; METAL-OXIDE SEMICONDUCTORS; PMOSFET; TAON INTERLAYER;

DIELECTRIC DEVICES;

EID: 54849362600     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2004282     Document Type: Article

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