SCOPUS 정보 검색 플랫폼

Volumn 100, Issue 14, 2012, Pages

Aluminum oxide as passivation and gate insulator in GaAs-based field-effect transistors prepared in situ by metal-organic vapor deposition

(7) Kordos P a,b Kudela R a Stoklas, R a Cico K a Mikulics, M c Gregusova D a Novak J a

a INSTITUTE OF ELECTRICAL ENGINEERING (Slovakia)

b SLOVAK UNIVERSITY OF TECHNOLOGY (Slovakia)

c FORSCHUNGSZENTRUM JÜLICH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM OXIDES; DEFECT STATE; FREQUENCY DISPERSION; GATE INSULATOR; HIGH CARRIER MOBILITY; IN-SITU; METAL OXIDE SEMICONDUCTOR STRUCTURES; METAL-ORGANIC; MOS STRUCTURE; OXIDE SURFACE; ROOM TEMPERATURE OXIDATION; SATURATION DRAIN CURRENT; SEMICONDUCTOR STRUCTURE; SHEET CHARGE DENSITY; SI MOS TRANSISTORS; TRANSISTOR CHANNELS;

CAPACITANCE MEASUREMENT; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GALLIUM ARSENIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXIDES; PASSIVATION; SEMICONDUCTING GALLIUM; TRANSISTORS; VAPORS;

SEMICONDUCTING SILICON;

EID: 84859791211 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3701584 Document Type: Article

Times cited : (17)

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