Migration of interfacial oxygen ions modulated resistive switching in oxide-based memory devices

Journal of Applied Physics

Volumn 114, Issue 1, 2013, Pages

  Chen, C ^a   Gao, S ^a   Zeng, F ^a   Tang, G S ^a   Li, S Z ^a   Song, C ^a   Fu, H D ^a   Pan, F ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODE SELECTION; INTERFACIAL LAYER; INTERFACIAL OXYGEN; NON-VOLATILE MEMORY; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; RESISTIVE SWITCHING MEMORY; SWITCHING CHARACTERISTICS;

BUBBLES (IN FLUIDS); ELECTRODES; HAFNIUM; IONS; METALS; NICKEL; OXYGEN; SWITCHING SYSTEMS; TANTALUM OXIDES; ZIRCONIUM;

LEAD OXIDE;

EID: 84880897834     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4812486     Document Type: Article

References (40)

1. T. W. Hickmott, J. Appl. Phys. 33, 2669 (1962). 10.1063/1.1702530
2. R. Waser, R. Dittmann, G. Staikov, and K. Szot, Adv. Mater. 21, 2632 (2009). 10.1002/adma.200900375
3. S. Hirose, H. Nishimura, and H. Niimi, J. Appl. Phys. 106, 043714 (2009). 10.1063/1.3204476
4. I. Valov, I. Sapezanskaia, A. Nayak, T. Tsuruoka, T. Bredow, T. Hasegawa, G. Staikov, M. Aono, and R. Waser, Nature Mater. 11, 530 (2012). 10.1038/nmat3307
5. Z. Wei, Y. Kanzawa, K. Arita, Y. Katoh, K. Kawai, S. Muraoka, S. Mitani, S. Fujii, K. Katayama, M. Iijima, T. Mikawa, T. Ninomiya, R. Miyanaga, Y. Kawashima, K. Tsuji, A. Himeno, T. Okada, R. Azuma, K. Shimakawa, H. Sugaya, I. Takagi, R. Yasuhara, K. Horiba, H. Kumigashira, and M. Oshima, IEEE Tech. Dig.-Int. Electron Devices Meet. 2008, 293. 10.1109/IEDM.2008.4796676
6. Y. C. Yang, F. Pan, Q. Liu, M. Liu, and F. Zeng, Nano Lett. 9, 1636 (2009). 10.1021/nl900006g
7. X. J. Zhu, W. J. Su, Y. W. Liu, B. L. Hu, L. Pan, W. Lu, J. D. Zhang, and R. W. Li, Adv. Mater. 24, 3941 (2012). 10.1002/adma.201201506
8. S. Yu, H.-Y. Chen, B. Gao, J. Kang, and H. S. P. Wong, ACS Nano 7, 2320 (2013). 10.1021/nn305510u
9. Y.-C. Chen, Y.-L. Chung, B.-T. Chen, W.-C. Chen, and J.-S. Chen, J. Phys. Chem. C 117, 5758 (2013). 10.1021/jp311951e
10. Y. C. Yang, P. Gao, S. Gaba, T. Chang, X. Q. Pan, and W. Lu, Nat. Commun. 3, 732 (2012). 10.1038/ncomms1737
11. Y. F. Chang, T. C. Chang, and C. Y. Chang, J. Appl. Phys. 110, 053703 (2011). 10.1063/1.3630119
12. B. L. Hu, X. J. Zhu, X. X. Chen, L. Pan, S. S. Peng, Y. Z. Wu, J. Shang, G. Liu, Q. Yan, and R. W. Li, J. Am. Chem. Soc. 134, 17408 (2012). 10.1021/ja307933t
13. B. Cho, J.-M. Yun, S. Song, Y. Ji, D.-Y. Kim, and T. Lee, Adv. Funct. Mater. 21, 3976 (2011). 10.1002/adfm.201101210
14. S. Gao, C. Song, C. Chen, F. Zeng, and F. Pan, J. Phys. Chem. C 116, 17955 (2012). 10.1021/jp305482c
15. F. Verbakel, S. C. J. Meskers, D. M. de Leeuw, and R. A. J. Janssen, J. Phys. Chem. C 112, 5254 (2008). 10.1021/jp800624u
16. M.-J. Lee, C. B. Lee, D. Lee, S. R. Lee, M. Chang, J. H. Hur, Y.-B. Kim, C.-J. Kim, D. H. Seo, S. Seo, U. I. Chung, I.-K. Yoo, and K. Kim, Nature Mater. 10, 625 (2011). 10.1038/nmat3070
17. F. Miao, J. P. Strachan, J. J. Yang, M.-X. Zhang, I. Goldfarb, A. C. Torrezan, P. Eschbach, R. D. Kelley, G. Medeiros-Ribeiro, and R. S. Williams, Adv. Mater. 23, 5633 (2011). 10.1002/adma.201103379
18. F. Pan, C. Chen, Z. S. Wang, Y. C. Yang, J. Yang, and F. Zeng, Prog. Nat. Sci. 20, 1 (2010). 10.1016/S1002-0071(12)60001-X
19. J. J. Yang, F. Miao, M. D. Pickett, D. A. A. Ohlberg, D. R. Stewart, C. N. Lau, and R. S. Williams, Nanotechnology 20, 215201 (2009). 10.1088/0957-4484/20/21/215201
20. D. H. Kwon, K. M. Kim, J. H. Jang, J. M. Jeon, M. H. Lee, G. H. Kim, X. S. Li, G. S. Park, B. Lee, S. Han, M. Kim, and C. S. Hwang, Nat. Nanotechnol. 5, 148 (2010). 10.1038/nnano.2009.456
21. J. J. Yang, J. P. Strachan, Q. Xia, D. A. A. Ohlberg, P. J. Kuekes, R. D. Kelley, W. F. Stickle, D. R. Stewart, G. Medeiros-Ribeiro, and R. S. Williams, Adv. Mater. 22, 4034 (2010). 10.1002/adma.201000663
22. H. Y. Jeong, J. Y. Lee, and S.-Y. Choi, Adv. Funct. Mater. 20, 3912 (2010). 10.1002/adfm.201001254
23. C. Chen, C. Song, J. Yang, F. Zeng, and F. Pan, Appl. Phys. Lett. 100, 253509 (2012). 10.1063/1.4730601
24. Y. H. Do, J. S. Kwak, J. P. Hong, K. Jung, and H. Im, J. Appl. Phys. 104, 114512 (2008). 10.1063/1.3032896
25. T. Sakamoto, K. Lister, N. Banno, T. Hasegawa, K. Terabe, and M. Aono, Appl. Phys. Lett. 91, 092110 (2007). 10.1063/1.2777170
26. S. Nemana and B. C. Gates, J. Phys. Chem. B 110, 17546 (2006). 10.1021/jp0629386
27. S. Nemana, N. L. Okamoto, N. D. Browning, and B. C. Gates, Langmuir 23, 8845 (2007). 10.1021/la063769j
28. G. Chen, C. Song, C. Chen, S. Gao, F. Zeng, and F. Pan, Adv. Mater. 24, 3515 (2012). 10.1002/adma.201201595
29. H. S. P. Wong, H.-Y. Lee, S. Yu, Y.-S. Chen, Y. Wu, P.-S. Chen, B. Lee, F. T. Chen, and M.-J. Tsai, Proc. IEEE 100, 1951 (2012). 10.1109/JPROC.2012. 2190369
30. T. Lee and Y. Chen, MRS Bull. 37, 144 (2012). 10.1557/mrs.2012.4
31. H. D. Kim, H. M. An, and T. G. Kim, J. Appl. Phys. 109, 016105 (2011). 10.1063/1.3525991
32. C. Chen, F. Pan, Z. S. Wang, J. Yang, and F. Zeng, J. Appl. Phys. 111, 013702 (2012). 10.1063/1.3672811
33. J. A. Dean, Lange's Handbook of Chemistry, 15th ed. (McGraw-Hill Professional, Columbus, 1998).
34. J. Yao, L. Zhong, D. Natelson, and J. M. Tour, J. Am. Chem. Soc. 133, 941 (2011). 10.1021/ja108277r
35. D. Deleruyelle, C. Dumas, M. Carmona, C. Muller, S. Spiga, and M. Fanciulli, Appl. Phys. Express 4, 051101 (2011). 10.1143/APEX.4.051101
36. Q. Liu, S. B. Long, H. B. Lv, W. Wang, J. B. Niu, Z. L. Huo, J. N. Chen, and M. Liu, ACS Nano 4, 6162 (2010). 10.1021/nn1017582
37. C. Chen, S. Gao, G. Tang, H. Fu, G. Wang, C. Song, F. Zeng, and F. Pan, ACS Appl. Mater. Interfaces 5, 1793 (2013). 10.1021/am303128h
38. J. J. Yang, J. P. Strachan, F. Miao, M.-X. Zhang, M. D. Pickett, W. Yi, D. A. A. Ohlberg, G. Medeiros-Ribeiro, and R. S. Williams, Appl. Phys. A 102, 785 (2011). 10.1007/s00339-011-6265-8
39. C. R. Aita, Nanostruct. Mater. 4, 257 (1994). 10.1016/0965-9773(94)90135- X
40. G. I. Pangilinan and T. P. Russell, J. Chem. Phys. 111, 445 (1999). 10.1063/1.479322