Silicon oxide: A non-innocent surface for molecular electronics and nanoelectronics studies

Journal of the American Chemical Society

Volumn 133, Issue 4, 2011, Pages 941-948

  Yao, Jun ^a   Zhong, Lin ^a   Natelson, Douglas ^a,b   Tour, James M ^a,b  

^a Rice University   (United States)

^b RICE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT HYSTERESIS; ELECTRICAL PHENOMENA; ELECTRICAL PROPERTY; ELECTRONIC SYSTEMS; NANO-MATERIALS; NANOMATERIAL; NEGATIVE DIFFERENTIAL RESISTANCES; NONLINEAR CONDUCTION; RESISTIVE SWITCHING; THIN LAYERS; UNDERLYING MECHANISM;

ELECTRIC PROPERTIES; MOLECULAR ELECTRONICS; NANOSTRUCTURED MATERIALS; SILICON COMPOUNDS;

SILICON OXIDES;

SILICON;

ARTICLE; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENT; ELECTRIC FIELD; HYSTERESIS; MOLECULAR ELECTRONICS;

ELECTRIC IMPEDANCE; ELECTRONICS; NANOTECHNOLOGY; NONLINEAR DYNAMICS; SILICON COMPOUNDS; SURFACE PROPERTIES;

EID: 79851493079     PISSN: 00027863     EISSN: 15205126     Source Type: Journal    
DOI: 10.1021/ja108277r     Document Type: Article

References (57)

1. He, J.; Chen, B.; Flatt, A K.; Stephenson, J. J.; Doyle, C. D.; Tour, J. M. Nat. Mater. 2006, 5, 63-68.
2. Majumadar, N.; Gergel, N.; Routenberg, D.; Bean, J. C.; Harriott, L. R.; Li, B.; Pu, L.; Yao, Y.; Tour, J. M. J. Vac. Sci. Technol, B 2005, 23, 1417-1421.
3. Scott, A.; Janes, D. B.; Risko, C.; Ratner, M. A. Appl. Phys. Lett. 2007, 91, 033508.
4. Tour, J. M.; Cheng, L.; Nackashi, D. P.; Yao, Y.; Flatt, A. K.; Angelo, S. K. St.; Mallouk, T. E.; Franzon, P. D. J. Am. Chem. Soc. 2003, 125, 13279-13283.
5. Lee, H.-K.; Jin, M. H.-C. Avvl. Phvs. Lett. 2010, 97, 013306.
6. Naitoh, Y.; Liang, T.-T.; Azehara, H.; Mizutani, W. Jpn. J. Appl. Phys. 2005, 44, 472-474.
7. Corley, D. A.; He, T.; Tour, J. M. ACS Nana 2010, 4, 1879-1888.
8. Li, Y.; Sinitskii, A.; Tour, J. M. Nat. Mater. 2008, 7, 966-971.
9. Sinitskii, A.; Tour, J. M. ACS Nano 2009, 3, 2760-2766.
10. Standley, B.; Bao, W.; Zhang, H.; Bruck, J.; Lau, C. N.; Bockrath, M. Nano Lett. 2008, 8, 3345-3349.
11. Naitoh, Y.; Yanagi, K.; Suga, H.; Horikawa, M.; Tanaka, T.; Kataura, H.; Shimizu, T. Avvl Phvs. Express 2009, 2, 035008.
12. Liao, Z.-M.; Hou, C.; Zhang, H.-Z.; Wang, D.-S.; Yu, D.-P. Appl. Phys. Lett. 2010, 96, 203109.
13. Meister, S.; Schoen, D. T.; Topinka, M. A.; Minor, A M.; Cui, Y. Nano Lett. 2008, 8, 4562-4567.
14. Yao, J.; Sun, Z.; Zhong, L.; Natelson, D.; Tour, J. M. Nano Lett. 2010, 10, 4105-4110.
15. Yao, J.; Zhong, L.; Zhang, Z.; He, T.; Jin, Z.; Wheeler, P. J.; Natelson, D.; Tour, J. M. Small 2009, 5, 2910-2915.
16. Yao, J.; Zhong, L.; Natelson, D.; Tour, J. M. Appl. Phys. Lett. 2008, 93, 253101.
17. Stewart, D. R.; Ohlberg, D. A A.; Beck, P. A.; Chen, Y.; Williams, R S. Nano Lett. 2004, 4, 133-136.
18. Karthauser, S.; Lussem, B.; Weides, M.; Alba, M.; Besmehn, A.; Oligschlaeger, R.; Waser, R. J. Avvl. Phvs. 2006, 100, 094504.
19. Howarter. T. A: Youngblood. T. P. Langmuir 2006. 22. 11142-11147.
20. Waser, R.; Aono, M. Nat. Mater. 2007, 6, 833-840.
21. Simmons, J. G.; Verderber, R. R. Proc. R. Soc. London, Ser. A 1967, 301, 77-102.
22. Dearnaley, G.; Stoneham, A M.; Morgan, D. V. Rep. Prog. Phys. 1970, 33, 1129-1191.
23. (a) Bozano, L. D.; Kean, B. W.; Deline, V. R.; Salem, J. R.; Scott, T. C. Avvl. Phvs. Lett. 2004, 84, 607-609.
24. (b) Pearson, C.; Ahn, J. H.; Mabrook, A. F.; Zeze, D. A.; Petty, M. C.; Kamtekar, K. T.; Wang, C.; Bryce, M. R.; Dimitrakis, P.; Tsoukalas, D. Appl. Phys. Lett. 2007, 91, 123506.
25. Soderstrom, J. R.; Chow, D. H.; McGill, T. C. Appl. Phys. Lett. 1989, 55, 1094-1096.
26. Boolchand, P.; Lucovsky, G.; Phillips, J. C.; Thorpe, M. F. Philos. Mag. 2005, 85, 3823-3838.
27. Furuta, S.; Takahashi, T.; Naitoh, Y.; Horikawa, M.; Shimizu, T.; Ono, M. Jon. J. Appl. Phvs. 2008, 47, 1806-1812.
28. Naitoh, Y.; Horikawa, M.; Abe, H.; Shimizu, T. Nanotechnology 2006, 17, 5669-5674.
29. Naitoh, Y.; Morita, Y.; Horikawa, M.; Suga, H.; Shimizhu, T. Appl. Phvs. Express 2008, 1, 103001.
30. Bandyopadhyay, A.; Pal, A J. Appl. Phvs. Lett. 2004, 84, 999-1001.
31. Milaninia, K. M.; Baldo, M. A.; Reina, A.; Kong, J. Appl. Phys. Lett. 2009, 95, 183105.
32. Xiang, W.; Lee, C. Appl. Phvs. Lett. 2010, 96, 193113.
33. Cho, B.-O.; Yasue, T.; Yoon, H.; Lee, M.-S.; Yeo, In.-S.; Chung, U.-In.; Moon, J.-T.; Ryu, B.-Il. IEDM 2006, 1-4.
34. Chu, C. W.; Ouyang, J.; Tseng, J.-H.; Yang, Y. Adv. Mater. 2005, 17, 1440-1443.
35. Yao, J.; Jin, Z.; Zhong, L.; Natelson, D.; Tour, J. M. ACS Nano 2009, 3, 4122-4126.
36. Scott, J. C.; Bozana, L. D. Adv. Mater. 2007, 19, 1452-1463.
37. Colle, M.; Buchel, M.; de Leeuw, D. M. Org. Electron. 2006, 7, 305-312.
38. Lau, C. N.; Stewart, D. R.; Williams, R S.; Bockrath, M. Nano Lett. 2004, 4, 569-572.
39. Tao, N. J. Nat. Nanotechnol. 2006, 1, 173-181.
40. Joachim, C.; Gimzewski, J. K.; Aviram, A. Nature 2000, 408, 541-548.
41. Salomon, A.; Arad-Yelin, R.; Shanzer, A.; Karton, A.; Cahen, D. J. Am. Chem. Soc. 2004, 126, 11648-11657.
42. Chen, J.; Reed, M. A.; Rawlett, A M.; Tour, J. M. Science 1999, 286, 1550-1552.
43. Chen, J.; Wang, W.; Reed, M. A.; Rawlett, A M.; Price, D. W.; Tour, J. M. Appl. Phvs. Lett. 2000, 77, 1224-1226.
44. Yu, L. W.; Chen, K. J.; Song, J.; Wang, J. M.; Xu, J.; Li, W.; Huang, X. F. Thin Solid Films 2007, 515, 5466-5470.
45. Selzer, Y.; Salomon, A.; Ghabboun, J.; Cahen, D. Angew. Chem., Int. Ed. 2002, 41, 827-830.
46. Keane, Z. K.; Ciszek, J. W.; Tour, J. M.; Natelson, D. Nano Lett. 2006, 6, 1518-1521.
47. Guisinger, N. P.; Greene, M. E.; Basu, R.; Baluch, A. S.; Hersam, M. C. Nano Lett. 2004, 4, 55-59.
48. Rakshit, T.; Liang, G.-C.; Ghosh, A W.; Datta, S. Nano Lett. 2004, 4, 1803-1807.
49. Chauhan, A. K.; Aswal, Koiry, S. P.; Padma, N.; Saxena, V.; Gupta, S. K.; Yakhmi, J. V. Phvs. Status Solidi A 2008, 205, 373-377.
50. Blum, A S.; Kushmerick, J. G.; Long, D. P.; Patterson, C. H.; Yang, J. C.; Henderson, J. C.; Yao, Y.; Tour, J. M.; Shashidhar, R.; Ratna, B. R. Nat. Mater. 2005, 4, 167-172.
51. Lortscher, E.; Ciszek, J. W.; Tour, J.; Riel, H. Small 2006, 2, 973-977.
52. (a) Dimaria, D. J.; Carrier, E.; Arnold, D. J. Appl. Phys. 1993, 7, 3367-3384.
53. (b) Ting, D. Z.-Y.; McGill, T. C. J. Vac. Sci. Technol, B 1998, 16, 2182-2187.
54. (c) Helms, C. R.; Poindexter, E. H. Rep. Prog. Phys. 1994, 57, 791-852.
55. (d) Sune, J.; Mura, G.; Miranda, E. IEEE Electron Device Lett. 2000, 4, 167-169.
56. (e) Poindexter, E. H. J. Non-Cryst. Solids 1995, 187, 257-263.
57. (f) Mayo, S.; SuehleJ. S.; Roitman, P. J. Appl. Phys. 1993, 74, 4113-4120.