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Journal of Applied Physics

Volumn 106, Issue 4, 2009, Pages

Resistance switching effect in Nb-doped SrTiO3 (100) bicrystal with (100) ∼45° twist boundary

(3) Hirose, Sakyo a Nishimura, Hitoshi a Niimi, Hideaki a

a MURATA MANUFACTURING CO LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODE INTERFACE; LARGE HYSTERESIS; MEMORY EFFECTS; NB-DOPED SRTIO; ORDERS OF MAGNITUDE; RESISTANCE CHANGE; RESISTANCE STATE; RESISTANCE SWITCHING; RESISTANCE SWITCHING EFFECT; ROOM TEMPERATURE; SCHOTTKY JUNCTIONS; SRTIO; TWIST BOUNDARIES; VOLTAGE PULSE;

BICRYSTALS; ELECTRIC POTENTIAL; NIOBIUM; STRONTIUM ALLOYS; SWITCHING SYSTEMS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 69749120521 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3204476 Document Type: Article

Times cited : (8)

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