SCOPUS 정보 검색 플랫폼

Journal of Applied Physics

Volumn 109, Issue 1, 2011, Pages

Improved reliability of Au/Si3N4 /Ti resistive switching memory cells due to a hydrogen postannealing treatment

(3) Kim, Hee Dong a An, Ho Myoung a Kim, Tae Geun a

a Korea University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT GAS; CURRENT RATIOS; DATA RETENTION; EFFECT OF HYDROGEN; IMPROVED RELIABILITY; INTERFACE TRAPS; MEMORY CELL; POST ANNEALING; POST ANNEALING TREATMENT; RESET CURRENTS; RESISTIVE SWITCHING MEMORIES; RETENTION TIME;

DURABILITY; SEMICONDUCTOR STORAGE;

HYDROGEN;

EID: 78751522684 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3525991 Document Type: Article

Times cited : (37)

References (13)

1
- 35748974883
- R. Waser and M. Aono, Nature Mater. 6, 833 (2007).
- (2007) Nature Mater. , vol.6 , pp. 833
- Waser, R.¹ Aono, M.²

2
- 67650102619
- R. Waser, R. Dittmann, G. Staikov, and K. Szot, Adv. Mater. 21, 2632 (2009).
- (2009) Adv. Mater. , vol.21 , pp. 2632
- Waser, R.¹ Dittmann, R.² Staikov, G.³ Szot, K.⁴

3
- 67649133369
- D. S. Jeong, H. Schroeder, and R. Waser, Phys. Rev. B 79, 195317 (2009).
- (2009) Phys. Rev. B , vol.79 , pp. 195317
- Jeong, D.S.¹ Schroeder, H.² Waser, R.³

4
- 77951797129
- Z. Fang, H. Y. Yu, W. J. Liu, Z. R. Wang, X. A. Tran, B. Gao, and J. F. Kang, IEEE Electron Device Lett. 31, 476 (2010).
- (2010) IEEE Electron Device Lett , vol.31 , pp. 476
- Fang, Z.¹ Yu, H.Y.² Liu, W.J.³ Wang, Z.R.⁴ Tran, X.A.⁵ Gao, B.⁶ Kang, J.F.⁷

5
- 77955721384
- H. Y. Jeong, J. Y. Lee, and S.-Y. Choi, Appl. Phys. Lett. 97, 042109 (2010).
- (2010) Appl. Phys. Lett. , vol.97 , pp. 042109
- Jeong, H.Y.¹ Lee, J.Y.² S.-Choi, Y.³

6
- 77958591143
- T. Tsuruoka, K. Terabe, T. Hasegawa, and M. Aono, Nanotechnology 21, 425205 (2010).
- (2010) Nanotechnology , vol.21 , pp. 425205
- Tsuruoka, T.¹ Terabe, K.² Hasegawa, T.³ Aono, M.⁴

7
- 78751531699
- South Korea Patent No. 0074034, 12 August
- J. Hong, D. Ho, J. Kwak, G. Chung, and M. Park, South Korea Patent No. 0074034, (12 August 2008).
- (2008)
- Hong, J.¹ Ho, D.² Kwak, J.³ Chung, G.⁴ Park, M.⁵

8
- 77952407108
- H.-D. Kim, H.-M. An, K. C. Kim, Y. Seo, K.-H. Nam, H.-B. Chung, E. B. Lee, and T. G. Kim, Semicond. Sci. Technol. 25, 065002 (2010).
- (2010) Semicond. Sci. Technol. , vol.25 , pp. 065002
- Kim, H.-D.¹ An, H.-M.² Kim, K.C.³ Seo, Y.⁴ Nam, K.-H.⁵ Chung, H.-B.⁶ Lee, E.B.⁷ Kim, T.G.⁸

9
- 36049040133
- T. Fang, S. Kaza, S. Haddad, A. Chen, Y. Wu, Z. Lan, S. Avanzino, D. Liao, C. Gopalan, S. Choi, S. Mahdavi, M. Buynoski, Y. Lin, C. Marrian, C. Bill, M. VanBuskirk, and M. Taguchi, Tech. Dig. - Int. Electron Devices Meet. 2006, 789.
- (2006) Tech. Dig. - Int. Electron Devices Meet. , pp. 789
- Fang, T.¹ Kaza, S.² Haddad, S.³ Chen, A.⁴ Wu, Y.⁵ Lan, Z.⁶ Avanzino, S.⁷ Liao, D.⁸ Gopalan, C.⁹ Choi, S.¹⁰ Mahdavi, S.¹¹ Buynoski, M.¹² Lin, Y.¹³ Marrian, C.¹⁴ Bill, C.¹⁵ VanBuskirk, M.¹⁶ Taguchi, M.¹⁷

10
- 43749088059
- Y. Sato, K. Tsunoda, K. Kinoshita, H. Noshiro, M. Aoki, and Y. Sugiyama, IEEE Trans. Electron Devices 55, 1185 (2008).
- (2008) IEEE Trans.Electron Devices , vol.55 , pp. 1185
- Sato, Y.¹ Tsunoda, K.² Kinoshita, K.³ Noshiro, H.⁴ Aoki, M.⁵ Sugiyama, Y.⁶

11
- 72449127023
- H.-D. Kim, H.-M. An, Y. Seo, Y. Zhang, J. S. Park, and T. G. Kim, Microelectron. Reliab. 50, 21 (2010).
- (2010) Microelectron. Reliab. , vol.50 , pp. 21
- Kim, H.-D.¹ An, H.-M.² Seo, Y.³ Zhang, Y.⁴ Park, J.S.⁵ Kim, T.G.⁶

12
- 77953284142
- H.-D. Kim, H.-M. An, Y. Seo, Y. Zhang, and T. G. Kim, IEEE Trans. Device Mater. Reliab. 10, 295 (2010).
- (2010) IEEE Trans. Device Mater. Reliab. , vol.10 , pp. 295
- Kim, H.-D.¹ An, H.-M.² Seo, Y.³ Zhang, Y.⁴ Kim, T.G.⁵

13
- 0000137628
- Z. Yin and F. W. Smith, Phys. Rev. B 43, 4507 (1991).
- (1991) Phys. Rev. B , vol.43 , pp. 4507
- Yin, Z.¹ Smith, F.W.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.