Investigation statistics of bipolar multilevel memristive mechanism and characterizations in a thin FeOx transition layer of TiN/SiO 2/FeOx/Fe structure

Journal of Applied Physics

Volumn 110, Issue 5, 2011, Pages

  Chang, Yao Feng ^a   Chang, Ting Chang ^b,c   Chang, Chun Yen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDITIONS; ELECTRICAL BEHAVIORS; ELECTROCHEMICAL REDOX; MEMRISTOR; PHYSICAL MODEL; RESISTANCE SWITCHING; RESISTIVE STATE; TRANSITION LAYERS;

IRON OXIDES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 80052958489     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3630119     Document Type: Conference Paper

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