A multilevel memory based on proton-doped polyazomethine with an excellent uniformity in resistive switching

Journal of the American Chemical Society

Volumn 134, Issue 42, 2012, Pages 17408-17411

  Hu, Benlin ^a   Zhu, Xiaojian ^a   Chen, Xinxin ^a   Pan, Liang ^a   Peng, Shanshan ^a   Wu, Yuanzhao ^a   Shang, Jie ^a   Liu, Gang ^a   Yan, Qing ^a   Li, Run Wei ^a  

^a NINGBO INSTITUTE OF MATERIALS TECHNOLOGY AND ENGINEERING   (China)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR DOPING; MULTILEVEL MEMORY; MULTILEVEL STORAGE; OPERATING PARAMETERS; ORGANIC NON-VOLATILE MEMORY DEVICES; POLYAZOMETHINES; RESISTANCE STATE; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORIES;

CHEMISTRY; SYNTHESIS (CHEMICAL);

NONVOLATILE STORAGE;

POLYMER; PROTONIC ACID DOPED POLYAZOMETHINE; UNCLASSIFIED DRUG;

ARTICLE; CHEMICAL ANALYSIS; CHEMICAL PARAMETERS; CHEMICAL REACTION; CHEMICAL STRUCTURE; ELECTRIC FIELD; RESISTIVE SWITCHING;

AZO COMPOUNDS; COMPUTER STORAGE DEVICES; POLYMERS; PROTONS; THIOSEMICARBAZONES;

EID: 84867799445     PISSN: 00027863     EISSN: 15205126     Source Type: Journal    
DOI: 10.1021/ja307933t     Document Type: Article

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