Interfacial oxygen and nitrogen induced dipole formation and vacancy passivation for increased effective work functions in TiN/HfO2 gate stacks

Applied Physics Letters

Volumn 96, Issue 10, 2010, Pages

  Hinkle, C L ^a   Galatage, R V ^a   Chapman, R A ^a   Vogel, E M ^a   Alshareef, H N ^b   Freeman, C ^c   Wimmer, E ^c   Niimi, H ^d   Li Fatou, A ^d   Shaw, J B ^d   Chambers, J J ^d  

^a The University of Texas at Dallas   (United States)

^b KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

^c Materials Design Inc   (United States)

^d TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT ENVIRONMENT; ATOMIC CONCENTRATION; EFFECTIVE WORK FUNCTION; ELECTRICAL THICKNESS; FIRST-PRINCIPLES CALCULATION; GATE STACKS; INDUCED DIPOLES; INTERFACIAL OXYGEN; LOW TEMPERATURES; OXYGEN CONCENTRATIONS;

HAFNIUM COMPOUNDS; OXYGEN; PASSIVATION; TITANIUM NITRIDE; WORK FUNCTION;

OXYGEN VACANCIES;

EID: 77949673104     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3353993     Document Type: Article

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