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Applied Physics Letters

Volumn 102, Issue 9, 2013, Pages

Energy band alignment of atomic layer deposited HfO2 on epitaxial (110)Ge grown by molecular beam epitaxy

(4) Hudait, M K a Zhu, Y a Maurya, D b Priya, S b

a Virginia Polytechnic Institute and State University (United States)

b VIRGINIA POLYTECHNIC INSTITUTE AND STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER; ATOMIC LAYER DEPOSITED; BAND ALIGNMENTS; CONDUCTION BAND OFFSET; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; ENERGY-BAND ALIGNMENT; SHARP INTERFACE; VALENCE BAND OFFSETS;

ALIGNMENT; ATOMIC LAYER DEPOSITION; CHEMICAL PROPERTIES; DEPOSITS; ENERGY GAP; HAFNIUM OXIDES; HETEROJUNCTIONS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PHOTOELECTRONS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

GERMANIUM;

EID: 84875129029 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4794838 Document Type: Article

Times cited : (15)

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