Electrical transport and Al doping efficiency in nanoscale ZnO films prepared by atomic layer deposition

Journal of Applied Physics

Volumn 114, Issue 2, 2013, Pages

  Wu, Y ^a,b   Hermkens, P M ^a   Van De Loo, B W H ^a   Knoops, H C M ^a   Potts, S E ^a   Verheijen, M A ^a   Roozeboom, F ^a,b   Kessels, W M M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b HOLST CENTRE   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

AL-DOPED ZNO FILMS; CHEMICAL BONDING STATE; DOPING EFFICIENCY; DOPING LEVELS; ELECTRICAL TRANSPORT; ELECTRICAL TRANSPORT MECHANISMS; GRAIN-BOUNDARY MOBILITY; NANOSCALE ZNO;

ATOMIC LAYER DEPOSITION; BINDING ENERGY; DEPOSITION; ELECTRIC PROPERTIES; FERMI LEVEL; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GRAIN BOUNDARIES; METALLIC FILMS; OPTICAL PROPERTIES; PHOTOELECTRONS; SEMICONDUCTOR DOPING; SPECTROSCOPIC ELLIPSOMETRY; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC; ZINC OXIDE;

ALUMINUM;

EID: 84880361531     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4813136     Document Type: Conference Paper

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