Effects of post-deposition rapid thermal annealing on aluminum-doped ZnO thin films grown by atomic layer deposition

Applied Surface Science

Volumn 258, Issue 1, 2011, Pages 604-607

  Cheng, Yung Chen ^a  

^a NATIONAL UNIVERSITY OF TAINAN   (Taiwan)

Author keywords

Aluminum doped ZnO; Atomic layer deposition; Rapid thermal annealing

Indexed keywords

ALUMINA; ALUMINUM; ALUMINUM COATINGS; ALUMINUM OXIDE; ATOMS; CRYSTAL ATOMIC STRUCTURE; II-VI SEMICONDUCTORS; RAPID THERMAL ANNEALING; SAPPHIRE; SEMICONDUCTOR DOPING; THIN FILMS; X RAY DIFFRACTION; ZINC OXIDE;

ALUMINUM-DOPED ZNO; BIAXIAL COMPRESSIVE STRAIN; ELECTRON CONCENTRATION; ORDERS OF MAGNITUDE; PHOTOLUMINESCENCE PEAK; RAPID THERMAL ANNEALING (RTA); SAPPHIRE SUBSTRATES; STRAIN-INDUCED DEFECTS;

ATOMIC LAYER DEPOSITION;

EID: 80054717072     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2011.07.124     Document Type: Article

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