SCOPUS 정보 검색 플랫폼

Volumn 257, Issue 11, 2011, Pages 4906-4911

Effects of post-annealing on structural, optical and electrical properties of Al-doped ZnO thin films

(8) Tong, Hao a,b Deng, Zhonghua a Liu, Zhuguang a Huang, Changgang a Huang, Jiquan a Lan, Hai a,b Wang, Chong a,b Cao, Yongge a

a FUJIAN INSTITUTE OF RESEARCH ON THE STRUCTURE OF MATTER (China)

b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES (China)

Author keywords

Annealing; AZO films; Electrical resistivity

Indexed keywords

ALUMINUM COATINGS; ALUMINUM OXIDE; ELECTRIC CONDUCTIVITY; GRAIN BOUNDARIES; HYDROGEN; II-VI SEMICONDUCTORS; MAGNETRON SPUTTERING; NITROGEN; OPTICAL FILMS; OXYGEN VACANCIES; THIN FILMS; TRANSPARENT CONDUCTING OXIDES; ZINC OXIDE;

ADSORBED OXYGEN; ALUMINUM-DOPED ZINC OXIDE; ANNEALING ATMOSPHERES; AZO FILMS; HYDROGEN ANNEALING; OPTICAL AND ELECTRICAL PROPERTIES; POST ANNEALING; RADIO FREQUENCY MAGNETRON SPUTTERING;

ANNEALING;

EID: 79951683119 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2010.12.144 Document Type: Article

Times cited : (123)

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