Flexible low-voltage organic thin-film transistors enabled by low-temperature, ambient solution-processable inorganic/organic hybrid gate dielectrics

Journal of the American Chemical Society

Volumn 132, Issue 49, 2010, Pages 17426-17434

  Ha, Young Geun ^a   Jeong, Sunho ^a,c   Wu, Jinsong ^b   Kim, Myung Gil ^a   Dravid, Vinayak P ^b   Facchetti, Antonio ^a   Marks, Tobin J ^a,b  

^a NORTHWESTERN UNIVERSITY   (United States)

^b Northwestern University   (United States)

^c Korea Research Institute of Chemical Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT CONDITIONS; CHLORIDE PRECURSOR; CROSSLINKER; HIGH DIELECTRIC CONSTANTS; INORGANIC/ORGANIC HYBRID; INSULATING PROPERTIES; LOW TEMPERATURES; LOW VOLTAGES; LOW-VOLTAGE; ORGANIC SEMICONDUCTOR; ORGANIC THIN FILM TRANSISTORS; PENTACENES; PROCESSABLE; PROCESSING CONDITION; SEMICONDUCTOR FILMS;

CHEMICAL SENSORS; CHLORINE COMPOUNDS; DIELECTRIC FILMS; DIELECTRIC PROPERTIES; GATE DIELECTRICS; GATES (TRANSISTOR); SEMICONDUCTING ORGANIC COMPOUNDS; ZIRCONIUM;

THIN FILM TRANSISTORS;

ORGANIC MATTER; ZIRCONIUM;

ARTICLE; BIOFILM; CHEMICAL REACTION; DIELECTRIC CONSTANT; ELECTRIC POTENTIAL; FILM COATING; LOW TEMPERATURE; LOW TEMPERATURE PROCEDURES; ORGANIC THIN FILM TRANSISTOR; SEMICONDUCTOR;

EID: 78650097193     PISSN: 00027863     EISSN: 15205126     Source Type: Journal    
DOI: 10.1021/ja107079d     Document Type: Article

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