Crystallinity dependence of resistance switching in La0.7Ca 0.3MnO3 films grown by pulsed laser deposition

Journal of Applied Physics

Volumn 105, Issue 6, 2009, Pages

  Shang, D S ^a,b   Chen, L D ^a   Wang, Q ^a   Yu, W D ^a   Li, X M ^a   Sun, J R ^b   Shen, B G ^b  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

^b INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AG ELECTRODES; AMORPHOUS PHASE; ATOMIC FORCES; CRYSTALLINE GRAINS; CRYSTALLINITY; DEPOSITION TEMPERATURES; DIFFERENT SUBSTRATES; ELECTRIC-FIELD; GRAIN SIZES; METAL OXIDES; NANOCRYSTALLINE GRAINS; NON VOLATILE MEMORY DEVICES; NONVOLATILE; OXYGEN ATMOSPHERES; POTENTIAL APPLICATIONS; PULSED BIAS; PULSED LASERS; PULSED-LASER DEPOSITION TECHNIQUES; RAPID THERMAL ANNEALING PROCESS; RESISTANCE CHANGES; RESISTANCE SWITCHING; SI SUBSTRATES; TRAP DENSITIES; X- RAY DIFFRACTIONS; X-RAY PHOTOELECTRON MICROSCOPIES;

CALCIUM; CRYSTALLINE MATERIALS; CURRENT VOLTAGE CHARACTERISTICS; DATA STORAGE EQUIPMENT; ELECTRIC FIELDS; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; LANTHANUM; MANGANESE COMPOUNDS; OXYGEN; OXYGEN VACANCIES; PHASE INTERFACES; PHOTOELECTRON SPECTROSCOPY; PLATINUM; PULSED LASER DEPOSITION; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SILVER; SUBSTRATES; SWITCHING; TRANSMISSION ELECTRON MICROSCOPY;

AMORPHOUS FILMS;

EID: 63749125327     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3082762     Document Type: Article

References (40)

1. S. Jin, T. H. Tiefel', M. McCormack, R. A. Fastnacht, R. Ramesh, and L. H. Chen, Science 0036-8075 10.1126/science.264.5157.413 264, 413 (1994).
2. A. Asamitsu, Y. Tomioka, H. Kuwahara, and Y. Tokura, Nature (London) 0028-0836 10.1038/40363 388, 50 (1997).
3. S. Q. Liu, N. J. Wu, and A. Ignatiev, Appl. Phys. Lett. 0003-6951 10.1063/1.126464 76, 2749 (2000).
4. W. W. Zhuang, W. Pan, B. D. Ulrich, J. J. Lee, L. Stecker, A. Burmaster, D. R. Evans, S. T. Hsu, M. Tajiri, A. Shimaoka, K. Inoue, T. Naka, N. Awaya, K. Sakiyama, Y. Wang, S. Q. Liu, N. J. Wu, and A. Ignatiev, Tech. Dig.-Int. Electron Devices Meet. 2002, 193.
5. A. Sawa, T. Fujii, M. Kawasaki, and Y. Tukura, Appl. Phys. Lett. 0003-6951 10.1063/1.1812580 85, 4073 (2004).
6. M. J. Rozenberg, I. H. Inoue, and M. J. Sánchez, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.92.178302 92, 178302 (2004).
7. M. J. Rozenberg, I. H. Inoue, and M. J. Sánchez, Appl. Phys. Lett. 0003-6951 10.1063/1.2164917 88, 033510 (2006).
8. Y. B. Nian, J. Strozier, N. J. Wu, X. Chen, and A. Ignatiev, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.98.146403 98, 146403 (2007).
9. K. Szot, W. Speier, G. Bihlmayer, and R. Waser, Nature Mat. 5, 312 (2006). 1476-1122
10. S. T. Hsu, T. K. Li, and N. Awaya, J. Appl. Phys. 0021-8979 10.1063/1.2431922 101, 024517 (2007).
11. Ch. Jooss, J. Hoffmann, J. Fladerer, M. Ehrhardt, T. Beetz, L. Wu, and Y. Zhu, Phys. Rev. B 0163-1829 10.1103/PhysRevB.77.132409 77, 132409 (2008).
12. K. Tsubouchi, I. Ohkubo, H. Kumigashira, M. Oshima, Y. Matsumoto, K. Itaka, T. Ohnishi, M. Lippmaa, and H. Koinuma, Adv. Mater. (Weinheim, Ger.) 0935-9648 10.1002/adma.200601957 19, 1711 (2007).
13. H. L. Ju, J. Gopalakrishnan, J. L. Peng, Q. Li, G. C. Xiong, T. Venkatesan, and R. L. Greene, Phys. Rev. B 0163-1829 10.1103/PhysRevB.51.6143 51, 6143 (1995).
14. A. Biswas, M. Rajeswari, R. C. Srivastava, Y. H. Li, T. Venkatesan, R. L. Greene, and A. J. Millis, Phys. Rev. B 0163-1829 10.1103/PhysRevB.61.9665 61, 9665 (2000).
15. M. Fujimoto, H. Koyama, S. Kobayashi, Y. Tamai, N. Awaya, Y. Nishi, and T. Suzuki, Appl. Phys. Lett. 0003-6951 10.1063/1.2404592 89, 243504 (2006).
16. H. Y. Hwang, S. W. Cheong, P. G. Radaelli, M. Marezio, and B. Batlogg, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.75.914 75, 914 (1995).
17. M. Quintero, P. Levy, A. G. Leyva, and M. J. Rozenberg, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.98.116601 98, 116601 (2007).
18. Y. X. Wang, Y. Du, R. W. Qin, B. Han, J. Du, and J. H. Lin, J. Solid State Chem. 0022-4596 10.1006/jssc.2000.8994 156, 237 (2001).
19. V. G. Prokhorov, V. A. Komashko, V. L. Svetchnikov, Y. P. Lee, and J. S. Park, Phys. Rev. B 0163-1829 10.1103/PhysRevB.69.014403 69, 014403 (2004).
20. J. R. Sun, C. F. Yeung, K. Zhao, L. Z. Zhou, C. H. Leung, H. K. Wong, and B. G. Shen, Appl. Phys. Lett. 0003-6951 10.1063/1.125971 76, 1164 (2000).
21. J. Choi, H. Dulli, S. -H. Liou, P. A. Dowben, and M. A. Langell, Phys. Status Solidi B 0370-1972 10.1002/(SICI)1521-3951(199907)214:1<45::AID- PSSB453.0.CO;2-# 214, 45 (1999).
22. G. A. Carson, M. H. Nassir, and M. A. Langell, J. Vac. Sci. Technol. A 0734-2101 10.1116/1.580310 14, 1637 (1996).
23. Y. Zhang-Steenwinkel, J. Beckers, and A. Bliek, Appl. Catal., A 0926-860X 10.1016/S0926-860X(02)00241-7 235, 79 (2002).
24. N. A. Tulina, S. A. Zver'kov, A. Arsenov, Y. M. Mukovskii, and D. A. Shulyatev, Physica C 0921-4534 10.1016/S0921-4534(02)02287-6 385, 563 (2003).
25. E. Dagotto, T. Hotta, and A. Moreo, Phys. Rep. 0370-1573 10.1016/S0370-1573(00)00121-6 344, 1 (2001).
26. M. B. Salamon and M. Jaime, Rev. Mod. Phys. 0034-6861 10.1103/RevModPhys.73.583 73, 583 (2001).
27. D. S. Shang, Q. Wang, L. D. Chen, R. Dong, X. M. Li, and W. Q. Zhang, Phys. Rev. B 0163-1829 10.1103/PhysRevB.73.245427 73, 245427 (2006).
28. D. S. Shang, L. D. Chen, Q. Wang, W. Q. Zhang, Z. H. Wu, and X. M. Li, Appl. Phys. Lett. 0003-6951 10.1063/1.2364055 89, 172102 (2006).
29. R. Mahesh, R. Mahendiran, A. K. Raychaudhuri, and C. N. R. Rao, Appl. Phys. Lett. 0003-6951 10.1063/1.116167 68, 2291 (1996).
30. P. Levy, F. Parisi, G. Polla, D. Vega, G. Leyva, H. Lanza, R. S. Freitas, and L. Ghivelder, Phys. Rev. B 0163-1829 10.1103/PhysRevB.62.6437 62, 6437 (2000).
31. E. Gommert, H. Cerva, A. Rucki, R. V. Helmolt, J. Wecker, C. Kuhrt, and K. Samwer, J. Appl. Phys. 0021-8979 10.1063/1.364579 81, 5496 (1997).
32. R. Dong, Q. Wang, L. D. Chen, D. S. Shang, T. L. Chen, X. M. Li, and W. Q. Zhang, Appl. Phys. Lett. 0003-6951 10.1063/1.1915529 86, 172107 (2005).
33. D. S. Shang, L. D. Chen, Q. Wang, Z. H. Wu, W. Q. Zhang, and X. M. Li, J. Mater. Res. 0884-2914 10.1557/jmr.2008.0072 23, 302 (2008).
34. M. Fujimoto, H. Koyama, Y. Nishi, and T. Suzuki, Appl. Phys. Lett. 0003-6951 10.1063/1.2816124 91, 223504 (2007).
35. A. Plecenik, K. Frohlich, J. P. Espinos, J. P. Holgado, A. Halabica, M. Pripko, and A. Gilabert, Appl. Phys. Lett. 0003-6951 10.1063/1.1497439 81, 859 (2002).
36. R. Dong, W. F. Xiang, D. S. Lee, S. J. Oh, D. J. Seong, S. H. Heo, H. J. Choi, M. J. Kwon, M. Chang, M. Jo, M. Hasan, and H. Hwang, Appl. Phys. Lett. 0003-6951 10.1063/1.2736268 90, 182118 (2007).
37. T. Harada, I. Ohkubo, K. Tsubouchi, H. Kumigashira, T. Ohnishi, M. Lippmaa, Y. Matsumoto, H. Koinuma, and M. Oshina, Appl. Phys. Lett. 0003-6951 10.1063/1.2938049 92, 222113 (2008).
38. A. Odagawa, H. Sato, I. H. Inoue, H. Akoh, M. Kawasaki, Y. Tokura, T. Kanno, and H. Adachi, Phys. Rev. B 0163-1829 10.1103/PhysRevB.70.224403 70, 224403 (2004).
39. I. H. Inoue, S. Yasuda, H. Akinage, and H. Takagi, Phys. Rev. B 0163-1829 10.1103/PhysRevB.77.035105 77, 035105 (2008).
40. E. Dagotto, Science 0036-8075 10.1126/science.1107559 309, 257 (2005).