Effect of gallium content on bias stress stability of solution-deposited Ga-Sn-Zn-O semiconductor transistors

Thin Solid Films

Volumn 519, Issue 18, 2011, Pages 6164-6168

  Jeong, Youngmin ^a   Song, Keunkyu ^a   Jun, Taehwan ^a   Jeong, Sunho ^b   Moon, Jooho ^a  

^a Yonsei University   (South Korea)

^b Korea Research Institute of Chemical Technology   (South Korea)

Author keywords

Bias stress stability; Gallium tin zinc oxide; Sol gel; Thin film transistor

Indexed keywords

AMBIENT CONDITIONS; BIAS STRESS; BIAS-STRESS STABILITY; DEVICE OPERATIONS; DEVICE PERFORMANCE; ELECTRICAL CHARACTERISTIC; ELECTRICAL PERFORMANCE; FIELD-EFFECT MOBILITIES; IN-DEPTH ANALYSIS; OFF-CURRENT; ON/OFF RATIO; OXYGEN VACANCY CONCENTRATION; SECONDARY PHASE; SEMICONDUCTOR BEHAVIOR; SEMICONDUCTOR TRANSISTORS; SOLUTION-PROCESSED; TIN-ZINC OXIDES; ZINC TIN OXIDE;

CARRIER CONCENTRATION; CHEMICAL ANALYSIS; CHEMICAL STABILITY; OXYGEN VACANCIES; SEMICONDUCTOR DOPING; STABILITY; THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS; TIN; TIN OXIDES; ZINC; ZINC OXIDE;

TRANSISTORS;

EID: 79958114235     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.04.030     Document Type: Article

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