Continuous electrical tuning of the chemical composition of TaO x-based memristors

ACS Nano

Volumn 6, Issue 3, 2012, Pages 2312-2318

  Miao, Feng ^a   Yi, Wei ^a   Goldfarb, Ilan ^a   Yang, J Joshua ^a   Zhang, Min Xian ^a   Pickett, Matthew D ^a   Strachan, John Paul ^a   Medeiros Ribeiro, Gilberto ^a   Williams, R Stanley ^a  

^a HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

chemical composition; conduction channel; memristor; multilevel storage; state variable

Indexed keywords

CHEMICAL COMPOSITIONS; CONDUCTION CHANNEL; MEMRISTOR; MULTILEVEL STORAGE; STATE VARIABLES;

OXYGEN; PASSIVE FILTERS; RESISTORS;

MEMRISTORS;

EID: 84859135575     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn2044577     Document Type: Article

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