The fourth element

Proceedings of the IEEE

Volumn 100, Issue 6, 2012, Pages 1920-1927

  Chua, Leon O ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Fourth element; Hodgkin Huxley axon circuit model; memristor; pinched hystersis loops; circuit elements

Indexed keywords

TABLE LOOKUP;

CIRCUIT ELEMENTS; CIRCUIT MODELING; FOURTH ELEMENT; HYSTERSIS LOOP; MEMRISTOR;

MEMRISTORS;

EID: 84861185379     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPROC.2012.2190814     Document Type: Conference Paper

References (40)

1. J. M. Tour and T. He, "The fourth element, "Nature, vol. 453, pp. 42-43, May 1, 2008.
2. L. O. Chua, Introduction to Nonlinear Network Theory. New York: McGraw Hill, 1969.
3. L. O. Chua, "Device modeling via basic nonlinear circuit elements, "IEEE Trans. Circuits Syst., vol. CAS-27, no. 11, pp. 1014-1044, Nov. 1980.
4. L. O. Chua, "Nonlinear circuit foundations for nano devices, Part I: The Four-Element torus, "Proc. IEEE, vol. 91, no. 11, pp. 1830-1859, Nov. 2003. (Pubitemid 40890789)
5. L. O. Chua, "MemristorVThe missing circuit element, "IEEE Trans. Circuit Theory, vol. CT-18, no. 5, pp. 507-519, Sep. 1971.
6. D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, "The missing memristor found, "Nature, vol. 453, pp. 80-83, 2008. (Pubitemid 351630336)
7. L. O. Chua, "Introduction to memristors, "IEEE Expert Now, 2009, Educational Course.
8. L. O. Chua and S. M. Kang, "Memristive devices and systems, "Proc. IEEE, vol. 64, no. 2, pp. 209-223, Feb. 1976.
9. R. G. Bartle, The Elements of Real Analysis, 2nd ed. New York: Wiley, 1976.
10. L. O. Chua, "Dynamic nonlinear networks: State of the art, "IEEE Trans. Circuits Syst., vol. CAS-27, no. 11, pp. 1059-1087, Nov. 1980.
11. M. Di. Ventra, Y. V. Pershin, and L. O. Chua, "Circuit elements with memory: Memristors, memcapacitors, meminductors, "Proc. IEEE, vol. 97, no. 10, pp. 1717-1723, Oct. 2009.
12. D. Biolek and V. Bioleova, "Mutator for transforming memristor into memcapacitor, "Electron. Lett., vol. 46, no. 21, pp. 1428-1429, 2010.
13. Y. V. Pershin and M. Di Ventra, Teaching Memory Circuit Elements via Experiment-Based Learning, arXiv: 1112.5427v1 [physics.ins-det].
14. L. O. Chua, "Resistance switching memories are memristors, "Appl. Phys. A, vol. 102, pp. 765-783, 2011.
15. H. Kim, M. P. Sah, and S. P. Adhikari, Pinched Hysteresis Loop is the Fingerprint of Memristive Devices, arXiv:1202.2437v1 [cond-mat.mes-hall].
16. A. L. Hodgkin and A. F. Huxley, "A quantitative description of membrane current and its application to the conduction and excitation in nerve, "J. Physiol., vol. 117, pp. 500-544, 1952.
17. L. O. Chua, V. Sbitnev, and H. Kim, "Hodgkin-Huxley Axon is made of memristors, "Int. J. Bifurcat. Chaos, vol. 21, 2012.
18. K. S. Cole, Membranes, Ions and Impulse. Berkeley, CA: Univ. California Press, 1972.
19. H. Ayrton, The Electric Arc. London, U.K.: Van Nostrand, 1902.
20. I. Valov, R. Waser, J. R. Jameson, and M. N. Kozicki, "Electrochemical metallization memoriesVFundamentals, applications, prospects, "Nanotechnology, vol. 2, 254003, 2011.
21. M. G. Bray and D. H. Werner, "Passive switching of electromagnetic devices with memristors, "Appl. Phys. Lett., vol. 96, pp. 0735041-0735043, 2010.
22. J. Borghetti, G. S. Snider, P. J. Kukes, J. J. Yang, D. R. Stewart, and R. S. Williams, "Memristive' switches enable Fstateful-logic operations via material implication, "Nature, vol. 464, pp. 873-876, 2010.
23. D. B. Strukov and R. S. Williams, "Four-dimensional address topology for circuits with stacked multilayer crossbar arrays, "Proc. Nat. Acad. Sci., vol. 106, pp. 20 155-20 158, 2009.
24. W. Lehtonen and M. Laiho, "Stateful implication logic with memristors, "in Proc. IEEE/ACM Int. Symp. Architectures, 2009, pp. 33-36.
25. J. Borghetti, Z. Li, X. Straznicky, X. Li, A. Ohlberg, W. Wu, D. R. Stewart, and R. S. Williams, "A hybrid nanomemristor/transistor logic circuit capable of self-programming, "Proc. Nat. Acad. Sci., vol. 106, pp. 1699-1703, 2009.
26. K. Kim, S. Shin, and S.-M. Kang, "Field programmable stateful logic array, "IEEE Trans. Comput.-Aided Design Integr. Circuits Syst., vol. 30, no. 12, pp. 1800-1813, Dec. 2011.
27. B. Linares-Barranco and T. Serrano-Gotarredona, "Memristance can explain spike-time-dependent-plasticity in neural synapses, "Nature Precedings, Mar. 31, 2009, DOI: hdl:10101/npre.2009. 3010.1.
28. S. H. Jo, T. Chang, I. Ebong, B. B. Bhadviya, P. Mazumder, and W. Lu, "Nanoscale memristor device as synapse in neuromorphic systems, "Nano Lett., vol. 10, pp. 1297-1301.
29. Y. V. Pershin and M. Di Ventra, Neuromorphic, Digital and Quantum Computation With Memory Circuit Elements, arXiv:1009.6025v3 [cond-mat.mes-hall].
30. G. S. Snider, "Spike-timing dependent learning in memristive nanodevices, "in Proc. IEEE/ACM Int. Symp. Nanoscale Architecture, 2008, pp. 85-92.
31. L. Liu, Y. Kang, M. Verma, and M. Orlowski, "Novel highly nonlinear memristive circuit elements for neural network, "in Proc. Int. Joint Conf. Neural Netw., "risbane, Australia, Jun. 2012, to be published.
32. T. Chang, S.-H. Jo, and W. Lu, "Short-term memory to long-term memory transition in a nanoscale memristor, "Amer. Chem. Soc. (ACS) Nano, vol. 5, pp. 7669-7676, 2011.
33. M. Itoh and L. O. Chua, "Memristor oscillators, "Int. J. Bifurcat. Chaos, vol. 18, pp. 3183-3206, 2008.
34. B. Muthuswamy and L. O. Chua, "Simplest chaotic circuit, "Int. J. Bifurcat. Chaos, vol. 20, pp. 1567-1580, 2010.
35. J.-M. Ginoux, C. Letellier, and L. O. Chua, "Topological analysis of chaotic solution of a three-element memristive circuit, "Int. J. Bifurcat. Chaos, vol. 20, pp. 3819-3827, 2010.
36. M. Itoh and L. O. Chua, "Memristor Hamiltonian circuits, "Int. J. Bifurcat. Chaos, vol. 21, pp. 2395-2425, 2011.
37. V.-T. Pham, A. Buscarino, M. Frasca, and L. Fortuna, "Autowaves in memristive cellular neural networks Int. J. Bifurcat. Chaos, vol. 22, no. 8, 2012, in press.
38. T. Prodromakis, C. Toumazou, and L. Chua, "Two centuries of memristors, "Nature Mater., vol. 11, Jun. 2012, in press
39. L. Chua, V. Sbitnev, and H. Kim, "Hodgkin-Huxley axon is made of memristors, "Int. J. Bifurcat. Chaos, vol. 22, no. 3, 2012, in press.
40. H. Kim and S. P. Adhikari, "Memistor is not memristor, "IEEE Circuits Syst. Mag., First Quarter 2012, pp. 75-78.